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A kind of preparation method of high-performance memristor

A memristor and high-performance technology, which is applied in the field of non-volatile memory storage devices, can solve the constraints of memristor storage capacity, low resistance, high resistance state contrast memristor response speed, large surface roughness of three-dimensional images, Problems such as poor pattern uniformity, achieve the effects of obvious and controlled on and off states, good pattern uniformity, and low cost

Active Publication Date: 2022-04-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

The principle and design of memristors are relatively mature, but due to the limitation of micro-nano processing technology or processing cost, it is still difficult to manufacture large-area memristors with submicron or nanoscale unit sizes, especially those with submicron or nanoscale tips. Memristor cells with topography are difficult to prepare, which restricts the storage capacity, contrast between low-resistance and high-resistance states of memristors, and the response speed of memristors, hindering its commercial development.
[0005] In addition, the existing technology uses microsphere arrays to manufacture masks with through holes, and uses wet etching to form three-dimensional cone-shaped columns, which makes the surface of the three-dimensional image rougher and the pattern uniformity is not good

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  • A kind of preparation method of high-performance memristor
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preparation example Construction

[0042] See figure 1 , figure 1 A method of preparing a high performance memristor disclosed in the present application, including the following steps:

[0043] S1: figure 2 As shown, a single layer colloidal microsphere array 2 is assembled on the low resistant silicon 1 to obtain a sample.

[0044] Among them, the low-resistant silicon is clean, dried, and polished low-resistant silicon.

[0045]More preferably, in an exemplary embodiment, a low-resistant silicon crystal is 100, 110 or 111, a conductivity approaches or less than 0.01 Ω · cm.

[0046] In yet another exemplary embodiment, the components of the colloidal microsphere include a polymer, a dielectric, a semiconductor, a metal, a colloidal microsphere size of 30 nm to 100 μm.

[0047] In yet another exemplary embodiment, the monolayer colloidal microsphere array in low-resistant silicon is used in low-resistant silicon, which includes spin coating, gas-liquid interface self-assembly, dropping-self-assembly, vertical Li ...

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Abstract

The invention discloses a method for preparing a high-performance memristor, which comprises the following steps: assembling a single-layer colloidal microsphere array on low-resistance silicon to obtain a sample; performing dry etching on the sample, and the low colloidal microsphere array below the colloidal microsphere array Cone-shaped columns appear on the resistive silicon, and the etching is stopped when the colloidal microsphere array is reduced to a certain size or completely etched; an insulating layer is prepared on the sample, and a metal layer is prepared on the insulating layer; from the underlying low-resistance silicon layer and the top metal layer lead out the electrodes respectively. In the present invention, the colloidal microsphere array is used as a mask plate and adopts dry etching to directly prepare a three-dimensional cone-shaped column array with a slope on the precision polished low-resistance silicon surface. Compared with wet etching, the surface of the three-dimensional pattern can be guaranteed. The roughness is small, the pattern uniformity is good, and the array has high parallelism in space.

Description

Technical field [0001] The present invention relates to the field of non-volatile memory storage devices, and more particularly to a preparation method of a high-performance memristor. Background technique [0002] In recent years, information technology ushered in rapid development. This is also a huge opportunity in the fields of communication, computer, storage equipment research and development. The storage carrier of the storage device as information is one of the core components of various types of electronic devices, the capacity of the storage medium, and the read / write speed affect the calculation speed of the chip. At present, the shortage of storage media is mainly reflected in both capacity and speed: the current Internet is commercially used, forcing the requirements for storage medium capacity to increase, while the storage medium based on the semiconductor transistor has to achieve it. The physical limit is not easy to expand capacity; the read and write speed of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/245H10N70/8418H10N70/011
Inventor 王军刘贤超崔官豪杨明苟君
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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