Charge pump control unit, charge pump circuit and nonvolatile memory

Abstract

The embodiment of the invention provides a charge pump control unit, a charge pump circuit and a nonvolatile memory. The charge pump control unit comprises a D trigger logic module, an RS trigger module, a first NOT gate, a second NOT gate, a third NOT gate, a first NAND gate, a second NAND gate, a third NAND gate and a fourth NAND gate. According to the embodiment of the invention, the charge pump control unit can output different control signals through the first control signal output end and the second signal output end, when the plurality of charge pump units are respectively controlled through the different control signals, the transistors in the charge pump units which do not work can be turned off, and the problem of voltage resistance of the transistors in the charge pump units which do not work is avoided.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a charge pump control unit, a charge pump circuit and a nonvolatile memory. Background technique [0002] A charge pump circuit is usually required in a non-volatile memory to generate a required voltage. The charge pump circuit usually includes multiple groups of charge pump units, and the voltage required for the operation of the non-volatile memory can be obtained by controlling the charge pump units to be turned on and off. [0003] In the prior art, the charge pump circuit usually also includes an amplifier unit and two voltage dividing resistors, and a negative feedback circuit is formed by the amplifier unit, the two voltage dividing resistors and the multiple groups of charge pump units, and the divided voltage is detected in the amplifier unit. When the voltage value returned by the resistor is lower than the reference voltage, one or more groups of charge pump units are ...

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Problems solved by technology

[0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: Since the voltage required by each module of the non-volatile memory may be different, when a certain module requires a very high voltage and only needs multiple groups of charge pump units A group of charge pump units in the unit work, and the transistors in the charge pump units that do not work will have withstand voltage problems, which will not only reduce the performance and life of the transistors, but also increase power consumption.

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