Excimer laser device and electronic device production method

Abstract

This excimer laser device comprises an etalon spectrometer for measuring a fringe waveform from laser light and a controller which determines the surface area of a first proportion of spectral space obtained on the basis of measurement results from the etalon spectrometer and calculates a first spectral line width of the laser light on the basis of the determined surface area of the first proportion, and the controller further calibrates the first spectral line width on the basis of a correlation function indicating a correlation between the first spectral line width and a second spectral linewidth of the laser light measured by a reference measurement apparatus.

Description

technical field [0001] The present disclosure relates to methods of manufacturing excimer laser devices and electronic devices. Background technique [0002] In recent years, in semiconductor exposure apparatuses (hereinafter referred to as “exposure apparatuses”), improvement in resolution has been demanded along with miniaturization and high integration of semiconductor integrated circuits. Therefore, the shortening of the wavelength of the light emitted from the light source for exposure is progressing. Generally, a gas laser device is used as a light source for exposure instead of a conventional mercury lamp. For example, as a gas laser device for exposure, a KrF excimer laser device that outputs ultraviolet laser light with a wavelength of 248 nm and an ArF excimer laser device that outputs ultraviolet laser light with a wavelength of 193 nm are used. [0003] As a new-age exposure technology, liquid immersion exposure in which the gap between the exposure lens on the...

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