Graphene high-pressure pressure sensor based on cross beam structure

A technology of high-pressure pressure and cross beams, which is applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., can solve the problems of unstable performance and sensitivity influence of traditional pressure sensors, and achieve improved pressure measurement range, improved sensitivity, The effect of measuring the obvious advantages

Pending Publication Date: 2020-06-26
ZHONGBEI UNIV
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Problems solved by technology

[0003] The purpose of the present invention is to provide a graphene high-pressure pressure sensor based on a cross beam structure to solve the problem that the sensitivity of the traditional pressure sensor proposed in the above background technology will be greatly affected when the measurement pressure range increases. The problem of unstable performance of the sensor in high temperature environment

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  • Graphene high-pressure pressure sensor based on cross beam structure
  • Graphene high-pressure pressure sensor based on cross beam structure
  • Graphene high-pressure pressure sensor based on cross beam structure

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] like Figure 1-2 As shown, a graphene high-pressure pressure sensor based on a cross-beam structure, including:

[0030] Encapsulation shell 1, the bottom of the inner side of the encapsulation shell 1 is provided with a mounting groove, and the exterior of the encapsulation shell 1 is provided with a threaded structure for connecting external installation components. The encapsulation shell 1 can be in different shapes such as square, rectangle, circle...

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Abstract

A graphene high-pressure pressure sensor based on a cross beam structure comprises a packaging shell, and a mounting groove is formed in the bottom of the inner side of the packaging shell; the diaphragm is arranged at the top of the packaging shell; the base is arranged in the mounting groove; the substrate is arranged on the base, a square hole is formed in the center of the substrate, a cross beam is arranged on the square hole, and graphene piezoresistive junctions are arranged at the joints of the cross beam and the substrate; one end of the convex column is connected to the bottom of thediaphragm, and the other end of the convex column is connected with the center of the cross beam. According to the invention, a silicon structure substrate and a stainless steel diaphragm are based on a basic framework; a cross beam structure is adopted, so that the pressure measurement range is expanded to the greatest extent; the pressure-sensitive characteristic of the graphene piezoresistivejunction is utilized to the maximum extent, the sensitivity is further improved. Meanwhile, the temperature borne by the device is increased to 300 DEG C, the measurement advantages under high temperature and high pressure are obvious, and the sensor becomes a very ideal high-temperature pressure sensor applied to dynamic and static high-temperature and high-pressure environments through filteringof a piezoresistive junction bridge circuit.

Description

technical field [0001] The invention belongs to the technical field of high pressure pressure measurement, in particular to a graphene high pressure pressure sensor based on a cross beam structure. Background technique [0002] High-pressure pressure sensors are widely used in pressure measurement in areas such as explosion fields, shock waves, gun bores, oil well drilling, deep-sea exploration, and chemical and pharmaceutical industries. However, the traditional pressure sensor uses a C-shaped square membrane structure. The square membrane structure has the advantages of simple manufacturing process and high sensitivity. When the measurement pressure range increases, the sensitivity will be greatly affected. In addition, the force sensitive resistor used in the traditional pressure sensor Most of the materials are silicon materials, whose performance is unstable under high temperature environment. Contents of the invention [0003] The purpose of the present invention is...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/00G01L1/22
CPCG01L1/22G01L9/0052
Inventor 李孟委王俊强薛伟
Owner ZHONGBEI UNIV
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