Application of nickel-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production

A molybdenum sulfide piezoelectric and molybdenum sulfide technology, applied in the production of molybdenum sulfide and hydrogen, catalyst activation/preparation, etc., can solve the problems of high cost, low abundance and limited application of precious metals

Pending Publication Date: 2020-07-07
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high cost and low abundance

Method used

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  • Application of nickel-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production
  • Application of nickel-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production
  • Application of nickel-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production

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preparation example Construction

[0045] Further, the nickel-doped molybdenum sulfide material is prepared by a hydrothermal method, and the preparation method includes the following steps:

[0046] (1) Sodium molybdate was dissolved in deionized water, and ultrasonically treated for 30-60mins to mix uniformly to obtain solution A;

[0047] (2) Dissolve thiourea in deionized water, and sonicate for 30-60mins until mixed uniformly to prepare solution B;

[0048] (3) dissolving nickel chloride hexahydrate in deionized water, and ultrasonic treatment for 30-60mins to mix uniformly to obtain solution C;

[0049] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 30-60mins until mixed uniformly to obtain mixed solution D;

[0050](5) Transfer the mixed solution D to a high-pressure reactor, and react at a temperature of 150-300° C. for 20-30 hours to prepare a nickel-doped molybdenum sulfide material.

[0051] Further, the concentration of the solution A is 0.1mol / L~1.0mol / L; t...

Embodiment 1

[0065] Piezoelectric enhancement material Ni-doped molybdenum sulfide material Ni-MoS 2 Preparation of semiconductor materials where the mass of Ni is MoS 2 10% of the mass.

[0066] (1) 2.42g (0.01mol) sodium molybdate (NaMoO 4 .2H 2 O) be dissolved in 30mL deionized water, and sonicate 30mins to mix homogeneously to prepare solution A;

[0067] (2) 3.05g (0.04mol) thiourea [(NH 2 ) 2 CS] was dissolved in 30mL deionized water, and ultrasonically treated for 30mins to mix uniformly to obtain solution B;

[0068] (3) 0.357g (0.0015mol) nickel chloride hexahydrate was dissolved in deionized water, and ultrasonically treated for 60mins to mix uniformly to prepare solution C;

[0069] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 60mins until mixed uniformly to obtain mixed solution D;

[0070] (5) Set the volume of the mixed liquid D to 100mL and transfer it to a high-pressure reactor, and react at a temperature of 200 °C for 24 hou...

Embodiment 2

[0077] Piezoelectric enhancement material Ni-doped molybdenum sulfide material Ni-MoS 2 Preparation of semiconductor materials where the mass of Ni is MoS 2 15% of the mass of

[0078] (1) 2.42g (0.01mol) sodium molybdate (NaMoO 4 .2H 2 O) be dissolved in 30mL deionized water, and sonicate 30mins to mix homogeneously to prepare solution A;

[0079] (2) 3.05g (0.04mol) thiourea [(NH 2 ) 2 CS] was dissolved in 30mL deionized water, and ultrasonically treated for 30mins to mix uniformly to obtain solution B;

[0080] (3) Dissolving 0.5355g (0.0022mol) nickel chloride hexahydrate in deionized water, and ultrasonic treatment for 60mins to mix uniformly to prepare solution C;

[0081] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 60mins until mixed uniformly to obtain mixed solution D;

[0082] (5) Set the volume of the mixed liquid D to 100mL and transfer it to a high-pressure reactor, and react at a temperature of 200 °C for 24 hours...

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Abstract

The invention provides an application of a nickel-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production. The nickel-doped molybdenum sulfide material (Ni-MoS2)comprises a molybdenum sulfide MoS2 material with response to near-infrared light and divalent nickel ions doped in molybdenum sulfide and on the surface of molybdenum sulfide. The nickel-doped molybdenum sulfide material provided by the invention can effectively utilize natural mechanical energy (such as vibration, noise, ultrasonic wave, stirring and the like), takes ammonia borane with the hydrogen content as high as 19.6 wt% as a hydrogen storage material to prepare hydrogen energy at normal temperature and normal pressure, and realizes self-energized piezoelectric enhanced hydrogen production. The hydrogen fuel can be prepared and used at any time, and the problem that hydrogen is not easy to store is solved. The preparation method of the nickel-doped molybdenum sulfide material provided by the invention is simple, feasible, green and environment-friendly.

Description

technical field [0001] The invention relates to the application of a nickel-doped molybdenum sulfide material in self-powered piezoelectric enhanced hydrogen production, in particular to the application of nickel-doped molybdenum sulfide material in photocatalytic self-powered piezoelectric enhanced hydrogen production, which belongs to the field of new energy. Background technique [0002] With the rapid development of human society, people's demand for energy is increasing, and the depletion of fossil fuels has caused energy shortages. Hydrogen energy has attracted widespread attention because of its high combustion value and no secondary pollution. However, hydrogen is prone to explosion, and the cost of compressing hydrogen is relatively high. Therefore, how to produce and use hydrogen safely, effectively and economically has always been a technical problem to be solved for hydrogen energy and hydrogen economy. Ammoniaborane (NH 3 BH 3 ) is a main hydrogen storage mat...

Claims

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Application Information

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IPC IPC(8): C01G39/06C01B3/06B01J19/10B01J19/12B01J27/051B01J37/10
CPCC01G39/06C01B3/065B01J19/10B01J19/128B01J27/0515B01J35/004B01J37/10C01P2002/72C01P2004/04C01P2006/60Y02E60/36
Inventor 刘守清黄匡正刘文晓
Owner SUZHOU UNIV OF SCI & TECH
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