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Embedded flash memory cell data reading circuit

A technology for storing unit data and reading circuits, which is applied in the field of memory and can solve problems such as the failure of normal connection of switching circuits

Pending Publication Date: 2020-07-07
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This application provides an embedded flash memory unit data reading circuit, which can solve the problem in the related art that the switch circuit cannot be connected normally due to the switch control voltage being too small

Method used

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  • Embedded flash memory cell data reading circuit
  • Embedded flash memory cell data reading circuit
  • Embedded flash memory cell data reading circuit

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Embodiment Construction

[0031] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0032] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention relates to the technical field of memories, in particular to an embedded flash memory cell data reading circuit. The circuit comprises a switching circuit, a current clamping circuit, acurrent mirror image circuit, a reference current source, a pre-charging circuit and a comparison circuit. The switching circuit comprises a transmission gate, one transmission end of the transmissiongate is connected with the drain electrode of the embedded flash memory unit through a bit line, and the other end of the transmission gate is connected with the detection end of the current clampingcircuit; the transmission gate is conducted when the first control end receives the first switch control voltage and / or the second control end receives the second switch control voltage; the responseend of the current clamping circuit is connected with the data node; the current mirror image circuit is connected with the reference current source and the data node; the output end of the pre-charging circuit is connected with the data node; one input end of the comparison circuit is connected with the data node, and the other input end is connected with reference voltage. Through the circuit structure, the problem that the switching circuit cannot be normally connected due to the fact that the switching control voltage is too small in the related technology can be solved.

Description

technical field [0001] The present application relates to the field of memory technology, in particular to an embedded flash memory unit data reading circuit. Background technique [0002] Embedded Flash memory unit (EmbeddedFlash, eflash) has occupied an increasingly important position in the field of non-volatile memory due to its performance advantages such as low cost, low power consumption, and fast access speed. With the development of science and technology, the application of data storage media has also shifted from traditional non-volatile memory to flash memory. Large-capacity solid-state storage devices with flash memory as the main storage medium have become one of the mainstream solutions for data storage today. [0003] Generally, a flash memory cell includes a floating gate structure, and by applying different operating voltages to the control gate, middle electrode, and source of the flash memory cell, the read, write, and erase operations of the flash memory...

Claims

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Application Information

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IPC IPC(8): G11C16/26G11C16/24G11C16/30
CPCG11C16/26G11C16/24G11C16/30G11C16/28G11C16/0425G11C2207/063G11C7/062G11C16/0408
Inventor 黄明永肖军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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