Semiconductor detection device and detection method

A detection device, semiconductor technology, applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problem that photoresist films cannot generate effective signals, etc., and achieve easy nonlinear optical signals and easy acquisition. Effect

Pending Publication Date: 2020-07-14
ZICHUANG NANJING TECH CO LTD
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Problems solved by technology

The traditional infrared absorption spectroscopy method is unable to measure the uniformity change of the effective molecular structure of the photoresist layer througho

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  • Semiconductor detection device and detection method
  • Semiconductor detection device and detection method
  • Semiconductor detection device and detection method

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[0038] As described in the background art, realizing real-time detection of molecular-level defects in the manufacturing process is one of the problems to be solved in the field of semiconductor yield detection.

[0039] In order to solve the problem of real-time detection of molecular-level defects in the development and production of advanced semiconductor manufacturing processes due to new materials and process flows, embodiments of the present invention provide a semiconductor detection device and detection method. In the semiconductor detection device, the nonlinear optical signal used for detection can be sorted from the sum-frequency reflected light to characterize the photochemically active molecular distribution and molecules of the photoresist before exposure or the photoresist after exposure Structural information defects, so as to achieve non-destructive semiconductor device molecular-level defect detection.

[0040] In order to make the above-mentioned objects, feature...

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Abstract

The invention provides a semiconductor detection device and method, and the device comprises a bearing device which is used for bearing a to-be-detected wafer; an incident light system which is used for respectively emitting first incident light and second incident light to the surface of the to-be-detected wafer, wherein the first incident light and the second incident light are reflected by thewafer to be detected at the same time and at the same incident point to form sum frequency reflected light; an optical signal sorting system which is used for sorting non-linear optical signals from the sum frequency reflected light; and a control system which is used for acquiring defect information of the to-be-detected wafer according to the nonlinear optical signal. According to the invention,non-destructive molecular-level defect detection in the manufacturing process is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor detection device and a detection method. Background technique [0002] The photolithography process is a key process for fabricating semiconductors and integrated circuits as graphic structures, and its process quality directly affects the stability and improvement of parameters such as device yield, reliability, device performance, and service life. The photoresist used in the lithography process is generally a mixture of organic polymer materials, generally including photoactive substances, solvents, additives, and resin molecules. In the photolithography process, the photoresist is evenly coated on the surface of the wafer. After being exposed by the photolithography machine, the molecular structure of the active ingredients in the photoresist is changed through a specific photochemical reaction, and then the photoresist on the mask is proce...

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 李海鹏
Owner ZICHUANG NANJING TECH CO LTD
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