Multipolar quantum cascade ring laser

Abstract

The invention discloses a multipolar quantum cascade ring laser, and the laser comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base andan emitter which are sequentially arranged from bottom to top, wherein the stepped arrangement is set between the emitter and the base, and between the quantum cascade structure layer and the collector; the laser further comprises a collector electrode arranged at the top of the collector electrode or below the substrate, a base electrode arranged at the top of the base electrode and an emitter electrode arranged at the top of the emitter electrode. And an annular waveguide and a strip-shaped straight waveguide coupled with the annular waveguide are etched on the laser. The multi-polar quantumcascade ring laser is simple in design and good in tunability, can output multi-wavelength or wide-spectrum or chaotic laser or frequency combs, and can effectively reduce the application cost of mid-infrared and terahertz sources in wide mid-infrared and terahertz applications.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor lasers, in particular to a multipolar quantum cascade ring laser. Background technique

[0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applications including ...

Examples

Embodiment 1

[0069] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0070] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two types of QCL subunits, A and B, and the two types of QCL subunits are composed of active regions and implanted regions, and the implanted regions only contain a se...

Embodiment 2

[0077] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doped regions of the B-type QCL subunit are N 1 and N 2 (N 1 ≠N 2 ).

[0078] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠N 2 ).

[0079] same, image 3 Among them, the A and B QCL subunits are the same in other parameters except the doping concentration parameter, where other parameters include: the layer thickness seq...

Embodiment 3

[0081] Such as Figure 5 As shown, it is a schematic structural diagram of the multipolar quantum cascade ring laser of the present invention, the substrate 7, the collector electrode 8, and the quantum cascade structure layer 9 are sequentially arranged along the z direction in the multipolar quantum cascade ring laser. , a quantum level matching layer 10, a base 11 and an emitter 12, and the emitter 12 is etched into a strip-shaped straight waveguide 18 and a ring waveguide 19 structure. The base 11 and the emitter 12 are arranged in steps, and the collector 8 and the quantum cascade structure layer 9 are also arranged in steps. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quantum cascade structure layer 9, a quantum energy level matching l...

technical field

[0001] The invention belongs to the technical field of semiconductor lasers, in particular to a multipolar quantum cascade ring laser. Background technique

[0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applications including ...

Examples

Embodiment 1

[0069] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0070] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two types of QCL subunits, A and B, and the two types of QCL subunits are composed of active regions and implanted regions, and the implanted regions only contain a se...

Embodiment 2

[0077] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doped regions of the B-type QCL subunit are N 1 and N 2 (N 1 ≠N 2 ).

[0078] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠N 2 ).

[0079] same, image 3 Among them, the A and B QCL subunits are the same in other parameters except the doping concentration parameter, where other parameters include: the layer thickness seq...

Embodiment 3

[0081] Such as Figure 5 As shown, it is a schematic structural diagram of the multipolar quantum cascade ring laser of the present invention, the substrate 7, the collector electrode 8, and the quantum cascade structure layer 9 are sequentially arranged along the z direction in the multipolar quantum cascade ring laser. , a quantum level matching layer 10, a base 11 and an emitter 12, and the emitter 12 is etched into a strip-shaped straight waveguide 18 and a ring waveguide 19 structure. The base 11 and the emitter 12 are arranged in steps, and the collector 8 and the quantum cascade structure layer 9 are also arranged in steps. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quantum cascade structure layer 9, a quantum energy level matching l...

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