Growth method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Abstract

The disclosure provides a growth method of a light-emitting diode epitaxial wafer and a light-emitting diode epitaxial wafer, which belong to the technical field of semiconductors. The growth method includes: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber to form a GaN crystal nucleus containing In atoms in a part of the sapphire substrate; grow at least one composite layer on the above, the GaN crystal nucleus grows to form a buffer layer, each of the composite layers includes an InGaN sub-layer and a GaN sub-layer grown on the InGaN sub-layer; growing on the buffer layer in turn The N-type GaN layer, the active layer and the P-type GaN layer form an epitaxial sheet, and the active layer includes alternately stacked InGaN quantum wells and GaN quantum barriers. The present disclosure effectively counteracts the stress generated by the lattice mismatch between the sapphire substrate and the GaN-based material by forming a bulky and stable GaN crystal nucleus.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode and the epitaxial wafer of a light emitting diode. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, LED epitaxial wafers include a sapphire substrate, a GaN buffer layer, an N-type GaN layer, an active layer in which InGaN quantum wells and...

AI Technical Summary

Problems solved by technology

[0004] There is a large lattice mismatch between the sapphire substrate and the GaN-based material, and the line defects generated by the lattice mismatch will extend to the active layer, affecting the recombination of electrons and holes and reducing the luminous efficiency of LEDs

Images