Sin selective etch to sio2 with non-plasma dry process for 3D NAND device applications
A plasma-selective technology, applied in the fields of electro-solid devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., that can solve problems such as no other material selectivity measurement
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example 1
[0177] Example 1: Etching with FNO on a planar wafer
[0178] Table 2 is for the mixed with N under various conditions 2 FNO etched SiN and SiO 2 Selective summary of planar wafers. The temperature ranges from 250°C to 400°C. The pressure ranges from 100 Torr to 400 Torr. Etching gas (FNO, N 2 ) in the range from 333 to 1000 sccm. The concentration of FNO ranges from 1% to 15% by volume. No F added 2 . Etching times range from 10 to 60 min.
[0179] Table 2. SiN versus SiO for planar wafers etched with FNO under various conditions 2 selectivity
[0180]
[0181] * 300nm thick SiN sample.
[0182] As shown, the etch rate of SiN and SiN relative to SiO 2 The selectivity of increases with the increase of T, P and FNO concentration (volume %). When using 10% FNO by volume, at 400 °C, 100 or 250 Torr, SiN relative to SiO 2 The selectivity exceeds 150. SiN relative to SiO at 250 °C and 250 Torr with 15% FNO by volume 2 The selectivity is also greater than 150. T...
example 2
[0183] Example 2: Etched Surface Analysis
[0184] Figure 5a and Figure 5b is used in a mix with N 2 FNO etch planar SiN and SiO respectively 2 XPS plot of the atomic percent of elements versus the number of sputtering cycles afterward. The etching conditions are as follows: temperature is 250 °C; pressure is 400 Torr; FNO, Ar and O 2 The total flow rate was 500 sccm; the FNO concentration was 10% by volume; the etching time was 30 min. Under the above conditions mixed with N 2 After FNO etching, SiN relative to SiO 2 The selectivity of is 177.9, as shown in table 2. Such as Figure 5a and Fig. 5b, for 9 sputtering cycles, on SiO 2 There is no nitrogen on the etched surface of SiN, but about 3% nitrogen remains on the etched surface of SiN. Oxygen is SiN and SiO 2 The main atoms on the two surfaces of . In SiN and SiO 2 Si is about 35% on both surfaces. In SiN and SiO 2 Between about 10% and about 20% fluorine on both surfaces of the
example 3
[0185] Example 3: Cyclic Etching
[0186] Table 3 is a listing of cycle etch results. A cyclic etch test is done by refreshing the surface passivation to understand etch performance. The etching conditions are as follows: temperature is 250°C; pressure is 100 Torr and 400 Torr; N 2 The concentration of FNO was 10% by volume; and the etching time was 30 min, 10×3 cycles and 5×6 cycles, respectively. As shown, cyclic etching enhanced the SiO 2 etching, and thus reduces the SiN / SiO 2 selectivity.
[0187] Table 3. Cycle etch results
[0188]
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