A kind of semiconductor memory and its manufacturing method, electronic equipment
A manufacturing method and memory technology, applied in the direction of semiconductor devices, electric solid devices, circuits, etc., can solve the problem of damaging the gate stack structure, and achieve the effect of avoiding damage
Active Publication Date: 2021-10-26
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
When manufacturing 3D NAND memory, the gate stack structure is often damaged during the manufacturing process
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[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0034] As mentioned in the background, NAND flash memory is a non-volatile storage product with low power consumption, light weight and good performance, and has been widely used in electronic products. At present, the NAND flash memory with a planar structure is close to the limit of practical expansion. In order to further increase the storage capacity and reduce the storage cost per bit, a 3D NAND memory with a 3D structure is proposed. When manufacturing 3...
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The invention provides a semiconductor memory and its manufacturing method, and electronic equipment, including: a substrate; a plurality of control gate stack structures and a plurality of array common source isolation layers located on one side of the substrate and arranged in isolation; The array common source connection layer on the side of the source isolation layer facing away from the substrate; the insulating filling layer covering the side of the array common source connecting layer facing away from the substrate and filling the groove between the adjacent array common source connecting layers, the insulating filling layer It includes a through hole corresponding to the array common source connection layer; a bridge line located on the side of the insulating filling layer away from the substrate and connecting two adjacent array common source connection layers through the through hole. When electrically connecting two adjacent array common source connection layers, it is only necessary to form a via hole at the place where the insulating filling layer corresponds to the array common source connection layer. The present invention does not need to dig holes in a large area at the corresponding control gate stack structure of the insulating filling layer, and avoids damage to the control gate stack structure when manufacturing the semiconductor memory.
Description
technical field [0001] The present invention relates to the technical field of semiconductor memory, and more specifically, to a semiconductor memory, a manufacturing method thereof, and electronic equipment. Background technique [0002] NAND flash memory is a non-volatile storage product with low power consumption, light weight and good performance, and has been widely used in electronic products. At present, the NAND flash memory with a planar structure is close to the limit of practical expansion. In order to further increase the storage capacity and reduce the storage cost per bit, a 3D NAND memory with a 3D structure is proposed. When manufacturing 3D NAND memory, the gate stack structure is often damaged during the manufacturing process. Contents of the invention [0003] In view of this, the present invention provides a semiconductor memory, its manufacturing method, and electronic equipment, which can effectively solve the technical problems existing in the prior...
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IPC IPC(8): H01L27/11519H01L27/11524H01L27/11551H01L27/11565H01L27/1157H01L27/11578H10B41/10H10B41/20H10B41/27H10B41/35H10B43/10H10B43/20H10B43/27H10B43/35
CPCH10B41/10H10B41/20H10B41/35H10B43/10H10B41/27H10B43/20H10B43/35H10B43/27
Inventor 赵祥辉曾臻阳叶军张文杰
Owner YANGTZE MEMORY TECH CO LTD