Structure for improving neutron measurement efficiency of semiconductor detector and manufacturing method thereof

Abstract

The invention relates to a structure for improving the neutron measurement efficiency of a semiconductor detector and a manufacturing method thereof. The structure is characterized in that a sensitiveregion of the semiconductor detector is provided with uniformly distributed holes; and 6LiF columns are arranged in the holes. The manufacturing method comprises the following steps: etching holes ina semiconductor detector according to a preset size and a preset position, and pouring 6LiF powder into the holes. The structure and the manufacturing method have the beneficial effects that the effective area can be greatly increased, so that the neutron measurement efficiency is improved, and the performance of the semiconductor detector is improved. The structure and method are simple in process, low in cost and high in practicability.

Description

technical field [0001] The invention belongs to the field of radiation measurement, and in particular relates to a structure for improving the neutron measurement efficiency of a semiconductor detector and a manufacturing method thereof. Background technique [0002] The basic principle of semiconductor detectors is that charged particles generate electron-hole pairs in the sensitive volume of semiconductor detectors, and drift to output signals under the action of an external electric field. Semiconductor detectors are small in size, light in weight, and low in power consumption, and are widely used in the field of radiation measurement. [0003] The semiconductor detector itself has a very low response to neutrons, and generally cannot be directly used for neutron measurement. If it is used for neutron measurement, a layer should be coated on the sensitive area of ​​the semiconductor detector. 6 LiF film, using 6 Li(n,α) 3 The α particles generated by the H reaction can...

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Problems solved by technology

[0003] The semiconductor detector itself has a very low response to neutrons, and generally cannot be directly used for neutron measurements. If it is used for neutron measurements, a layer of 6 LiF film, using 6 Li(n,α) 3 The α particles generated by the H reaction can indirectly measure neutrons by measuring α particles, but because the α particles generated by the reaction can only be detected in the 2π direction, coupled with the small effective area and self-absorption, this semiconductor detector is used to measure neutrons The neutron detection efficiency of the instrument is also low, which is manifested in the high detection limit, slow response of background or low-intensity neutron radiation instruments, large statistical fluctuations, and large uncertainty of measurement results, which greatly limits the use of semiconductor detectors. Further promote the application

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