Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a first conductivity type well, a second conductivity type buried layer, a first second conductivity type well, a first second conductivity type doped area, a second second-conductivity type well, and a second second-conductivity type doped area. The first conductivity type well is arranged on the substrate. The second conductivity type buried layer is disposed in the first conductivity type well and is separated from the substrate by a first predetermined distance. The first and second conductivity type wells are arranged in the first conductivity type well and are located on the second conductivity type buried layer, and are connected to the second conductivity type buried layer. The first and second conductivity type doped areas are arranged in the first and second conductivity type wells. The second second-conductivity type well is arranged in thefirst conductivity type well and above the second conductivity type buried layer, and is separated from the second conductivity type buried layer by a second predetermined distance. The second second-conductivity type doped region is arranged in the second second-conductivity type well.

Description

technical field [0001] The present invention relates to a semiconductor structure, in particular to a semiconductor structure of a junction field effect transistor with high current and low pinch-off voltage and a manufacturing method thereof. Background technique [0002] In the semiconductor industry, there are two main types of field effect transistors (FETs), the insulated gate field effect transistor (IGFET), commonly known as the metal oxide semiconductor field effect transistor (MOSFET). semiconductor field effect transistor, MOSFET), and junction field effect transistor (junction field effect transistor, JFET). The structural configurations of metal oxide semiconductor field effect transistors and junction field effect transistors are basically different. For example, the gate of a MOSFET includes an insulating layer, ie, a gate oxide, between the gate and the other electrodes of the transistor. Thus, the channel current in the Mosfet is controlled by an electric f...

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Problems solved by technology

[0004] Although the existing junction field effect transistors with semiconductor structures and their manufacturing methods have gradually met their intended purposes, there is always a trade-off relationship between the on-current and the pinch-off voltage of junction field-effect transistors. Generally speaking, it is necessary to increase the on-current When the pinch-off voltage is often increased, the pinch-off voltage cannot be kept low, which causes difficulties in design.

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