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A kind of ultra-high power laser for communication and its preparation method

An ultra-high power, laser technology, applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems affecting the integration density of the optical path of the silicon optical integrated module, affecting the transmission capacity of a single optical module, etc.

Active Publication Date: 2021-05-04
SHANXI YUANJIE SEMICONDUCTOR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The loss caused by the bonding process and the manufacture of silicon-based optical waveguides will directly affect the optical circuit integration density in the silicon optical integrated module, and ultimately affect the transmission capacity of a single optical module

Method used

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  • A kind of ultra-high power laser for communication and its preparation method
  • A kind of ultra-high power laser for communication and its preparation method
  • A kind of ultra-high power laser for communication and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Embodiment 1: The grating layer is arranged below the active layer (bottom grating), and the material of the grating diffraction layer is In 1-x Ga x As y P 1-y Among them, x=0.33, y=0.75; Diffraction grating layer thickness D g =50nm; first cladding thickness D c =100nm; second cladding thickness D b =100nm; phase shift grating width W p =1.5*Λ; the position ratio R of the phase shift grating p = 0.5. refer to Figure 7a , compared to the traditional top grating (the grating layer is placed above the active layer, see figure 2 ), its output optical power is increased by 40%, which fully meets the requirements of the silicon photonics integration scheme for the output power of the laser above 70mW.

Embodiment 2

[0045] Embodiment 2: Using the bottom grating structure, the material of the grating diffraction layer is In 1-x Ga x As y P 1-y Among them, x=0.07, y=0.15; Diffraction grating layer thickness D g =50nm; first cladding thickness D c =100nm; second cladding thickness D b =100nm; phase shift grating width W p =1.5*Λ; the position ratio R of the phase shift grating p = 0.5.

Embodiment 3

[0046] Embodiment 3: as Figure 7a As shown, using the bottom grating structure, the grating diffraction layer material composition In 1-x Ga x As y P 1-y Among them, x=0.55, y=0.85; Diffraction grating layer thickness D g =50nm; first cladding thickness D c =100nm; second cladding thickness D b =100nm; phase shift grating width W p =1.5*Λ; the position ratio R of the phase shift grating p = 0.5.

[0047] Figure 7b It is the laser output power curve of different grating diffraction layer material components. All three components can achieve the output power requirement of more than 70mW, but the optimal values ​​are x=0.33, y=0.75;

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Abstract

The invention discloses an ultra-high-power laser for communication and a preparation method thereof. The laser includes a substrate on which a high-photon-density phase-shift grating structure layer is arranged. The second cladding layer, the active layer, the third cladding layer and the contact layer, the contact layer is covered with a p-metal electrode layer, and the lower surface of the substrate is plated with an n-metal electrode layer; the bottom grating structure and high photon density phase shift grating design are adopted, To increase the photon density and photon distribution uniformity to meet the ultra-large optical power output requirements of the laser optical power above 70mW in the silicon photonics integration scheme.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers for communication, and in particular relates to an ultra-high-power laser for communication and a preparation method thereof. Background technique [0002] With the popularization of artificial intelligence, quantum computing and 5G network applications, the capacity demand of communication networks has shown explosive growth. Especially during the epidemic, applications such as global video conferencing, online education, and wireless communication have all experienced blowout growth. The realization of these applications depends on the support of the optical network transmission capacity of the data center. At present, the optical network of the data center adopts the 100G optical module using the traditional ultra-high-speed 25G direct modulation laser as the light source. With the rapid expansion of data center capacity, the optical network of the data center will migrate to 400...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/20
CPCH01S5/124
Inventor 李马惠穆瑶曹凡陈发涛潘彦廷
Owner SHANXI YUANJIE SEMICONDUCTOR TECH CO LTD
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