The application relates to the technical field of
semiconductor device special equipment manufacturing, and discloses a micro-order regulation method and
system based on a metastable
energy window. The method emits a pulse
photon beam with a specific frequency to the surface of a
semiconductor target material, so that lattice atoms enter a metastable
energy window; the
reflection spectrum of the
semiconductor target material is collected in real time during the pulse intermittent period, and lattice vibration mode features are extracted; the lattice vibration mode features are compared with preset metastable
energy window boundary threshold values, the
photon density and the duration of the next pulse
photon beam are dynamically adjusted according to the comparison result, and lattice atoms are repaired by short-range atomic rearrangement in the metastable energy window. The scheme limits energy injection to the metastable interval, and blocks the long-range
diffusion path of doped atoms.