The invention belongs to the technical field of non-volatile storage devices, and particularly relates to a novel storage cell capable of conducting high-speed calculation and high-capacity storage. The novel storage cell is formed by a bottom end electrode, an antiferromagnetic metal mixing layer, first ferromagnetic metal, first oxide, second ferromagnetic metal, first metal, second oxide, second metal and a top end electrode from bottom to top, a traditional ion beam epitaxy method, or a traditional atomic layer deposition method or a traditional magnetron sputtering method is adopted to plate each layer of matters of the storage cell on a substrate from bottom to top, and then a photoetching and etching traditional nanometer device machining process is used for conducting manufacturing. The novel storage cell is characterized by being formed by a storage cell body MIM of an OxRRAM and a storage cell body MTJ of an STT-RAM in an overlapped mode. The novel storage cell has the advantages of high-capacity storage and high-speed calculation, can be used for storage device hierarchical structure design, enables a data storage layer to be combined with a logic calculation storage layer, enables the capacity of the storage layers to be increased while high-speed calculation is kept, achieves non-volatile storage, and reduces power dissipation.