The invention belongs to the technical field of non-volatile storage devices, and particularly relates to a novel
storage cell capable of conducting high-speed calculation and high-capacity storage. The novel
storage cell is formed by a bottom end
electrode, an antiferromagnetic
metal mixing layer, first ferromagnetic
metal, first
oxide, second ferromagnetic
metal, first metal, second
oxide, second metal and a top end
electrode from bottom to top, a traditional
ion beam
epitaxy method, or a traditional
atomic layer deposition method or a traditional magnetron
sputtering method is adopted to plate each layer of matters of the
storage cell on a substrate from bottom to top, and then a photoetching and
etching traditional nanometer device
machining process is used for conducting manufacturing. The novel storage
cell is characterized by being formed by a storage
cell body MIM of an OxRRAM and a storage
cell body MTJ of an STT-RAM in an overlapped mode. The novel storage cell has the advantages of high-capacity storage and high-speed calculation, can be used for storage device hierarchical structure design, enables a data storage layer to be combined with a logic calculation storage layer, enables the capacity of the storage
layers to be increased while high-speed calculation is kept, achieves non-volatile storage, and reduces power dissipation.