Novel storage cell capable of conducting high-speed calculation and high-capacity storage

Abstract

The invention belongs to the technical field of non-volatile storage devices, and particularly relates to a novel storage cell capable of conducting high-speed calculation and high-capacity storage. The novel storage cell is formed by a bottom end electrode, an antiferromagnetic metal mixing layer, first ferromagnetic metal, first oxide, second ferromagnetic metal, first metal, second oxide, second metal and a top end electrode from bottom to top, a traditional ion beam epitaxy method, or a traditional atomic layer deposition method or a traditional magnetron sputtering method is adopted to plate each layer of matters of the storage cell on a substrate from bottom to top, and then a photoetching and etching traditional nanometer device machining process is used for conducting manufacturing. The novel storage cell is characterized by being formed by a storage cell body MIM of an OxRRAM and a storage cell body MTJ of an STT-RAM in an overlapped mode. The novel storage cell has the advantages of high-capacity storage and high-speed calculation, can be used for storage device hierarchical structure design, enables a data storage layer to be combined with a logic calculation storage layer, enables the capacity of the storage layers to be increased while high-speed calculation is kept, achieves non-volatile storage, and reduces power dissipation.

Description

technical field [0001] The invention provides a novel storage unit capable of high-speed calculation and large-capacity storage, which belongs to the technical field of non-volatile memory. Background technique [0002] In recent years, with the continuous development of emerging non-volatile memory technology, it has become more and more mature. These emerging non-volatile memory technologies combine the high speed of static random access memory (SRAM), the high density of dynamic random access memory (DRAM) and the non-volatility of flash memory (Flash), and have proven to be very useful in general-purpose memory hierarchy design. great potential. Among these emerging non-volatile memory technologies, spin transfer torque memory STT-RAM (Spin Transfer Torque Random Access Memory) and oxide memory OxRRAM (Oxide Resistive Random Access Memory) have been proven to be the two most promising general-purpose memory technologies at present. STT-RAM has a high read and write sp...

AI Technical Summary

Problems solved by technology

[0004] 1. With the continuous development of technology, the reliability of STT-RAM is reduced and cannot be used for high-speed computing;

[0005] 2. Compared with STT-RAM, OxRRAM has a lower writing speed and cannot be used for high-speed computing;

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