Novel storage cell capable of conducting high-speed calculation and high-capacity storage

A large-capacity storage and storage unit technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of low writing speed of OxRRAM, reduced reliability of STT-RAM, and inability to use high-speed calculations to achieve increased capacity , The effect of reducing power consumption

Active Publication Date: 2014-01-29
致真存储(北京)科技有限公司
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AI Technical Summary

Problems solved by technology

[0004] 1. With the continuous development of technology, the reliability of STT-RAM is reduced and cannot be used for high-speed computing;
[0005] 2. Compared with STT-RAM, OxRRAM has a lower writing speed and cannot be used for high-speed computing;

Method used

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  • Novel storage cell capable of conducting high-speed calculation and high-capacity storage
  • Novel storage cell capable of conducting high-speed calculation and high-capacity storage

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Embodiment Construction

[0047]The substantive features of the present invention are further described with reference to the accompanying drawings. The drawings are all schematic diagrams, and the thicknesses of the functional layers or regions involved are not actual dimensions, and the resistance and voltage values ​​in the working mode are also not actual values.

[0048] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0049] The invention proposes a novel storage unit capable of high-speed calculation and large-capacity storage, which can be used for both large-capacity storage and high-spee...

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Abstract

The invention belongs to the technical field of non-volatile storage devices, and particularly relates to a novel storage cell capable of conducting high-speed calculation and high-capacity storage. The novel storage cell is formed by a bottom end electrode, an antiferromagnetic metal mixing layer, first ferromagnetic metal, first oxide, second ferromagnetic metal, first metal, second oxide, second metal and a top end electrode from bottom to top, a traditional ion beam epitaxy method, or a traditional atomic layer deposition method or a traditional magnetron sputtering method is adopted to plate each layer of matters of the storage cell on a substrate from bottom to top, and then a photoetching and etching traditional nanometer device machining process is used for conducting manufacturing. The novel storage cell is characterized by being formed by a storage cell body MIM of an OxRRAM and a storage cell body MTJ of an STT-RAM in an overlapped mode. The novel storage cell has the advantages of high-capacity storage and high-speed calculation, can be used for storage device hierarchical structure design, enables a data storage layer to be combined with a logic calculation storage layer, enables the capacity of the storage layers to be increased while high-speed calculation is kept, achieves non-volatile storage, and reduces power dissipation.

Description

technical field [0001] The invention provides a novel storage unit capable of high-speed calculation and large-capacity storage, which belongs to the technical field of non-volatile memory. Background technique [0002] In recent years, with the continuous development of emerging non-volatile memory technology, it has become more and more mature. These emerging non-volatile memory technologies combine the high speed of static random access memory (SRAM), the high density of dynamic random access memory (DRAM) and the non-volatility of flash memory (Flash), and have proven to be very useful in general-purpose memory hierarchy design. great potential. Among these emerging non-volatile memory technologies, spin transfer torque memory STT-RAM (Spin Transfer Torque Random Access Memory) and oxide memory OxRRAM (Oxide Resistive Random Access Memory) have been proven to be the two most promising general-purpose memory technologies at present. STT-RAM has a high read and write sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
Inventor 赵巍胜张德明
Owner 致真存储(北京)科技有限公司
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