Drainage rotary substrate carrying device and vapor-phase epitaxy equipment

Abstract

The invention provides a drainage rotary substrate carrying device and vapor-phase epitaxy equipment. The drainage rotary substrate carrying device comprises a gas source device, a mother disc, a rotating device and a son disc, wherein the gas source device is used for providing source gas of vapor-phase epitaxy and the flowing mode of the source gas comprises rotary flowing; the mother disc is located below the gas source; the rotating device is connected to the mother disc so as to provide rotary power to the mother disc; and the son disc is used for carrying a substrate, the son disc is connected to the mother disc through a rotating shaft, and a volute runner is arranged on the son disc for guiding the source gas rotating rotatably to flow in the volute runner so as to drive the son disc to rotate. By pushing the son disc to rotate by the source gas in a volute line flowing mode on the surface of the son disc, planetary rotation of the device is achieved. According to the device, it is not needed to inject gas to the son disc additionally, so that a condition that residual gas damages the atmosphere of the edge of the substrate is avoided and the yield of epitaxial wafers is improved, and meanwhile, high purity flow and related gas control components can be further saved, so that the cost of the equipment is lowered greatly.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment, in particular to a drainage rotary substrate carrying device and vapor phase epitaxy equipment. Background technique [0002] In semiconductor manufacturing, vapor phase growth equipment uses various sources of gases to form thin films. Among them, chemical vapor deposition (Chemical Vapor Deposition, CVD) is a growth technique used to produce solid materials with high purity and good performance. When using CVD equipment to grow thin films, the reaction source gas is usually sent to the reaction chamber to mix with other reaction gases, and the heating temperature of the substrate to be grown is controlled by a heating device, and then a chemical reaction occurs on the substrate to be grown to form a thin film growth. In general, a CVD device includes a chamber, a support base disposed in the chamber, and a pipeline for allowing the reaction gas to flow to the surface of the substrate. ...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a drainage rotary substrate carrying device and vapor phase epitaxy equipment, which are use

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