Unlock instant, AI-driven research and patent intelligence for your innovation.
A kind of preparation method of planar superconducting nano bridge junction
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of nanobridge and superconducting thin film, which is applied in the manufacture/processing of superconductor devices, nanotechnology, nanotechnology, etc. It can solve the problems of lithographic precision limitation and inability to integrate on a large scale, and achieve the effect of simple process flow
Active Publication Date: 2022-06-21
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF10 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0006] The technical problem to be solved by the present invention is to provide a method for preparing a planar superconducting nano-bridge junction, which overcomes the defect that the existing preparation bridge junction technology is limited by the precision of photolithography and cannot be integrated on a large scale. The thickness of the film is used to make the nanobridge. The thickness of the film is the size of the bridge junction. It is not limited by the precision of lithography. The preparation of superconducting nanobridge junctions or arrays can be realized under traditional lithography.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0030] (1) Substrate selection: the substrate selects silicon dioxide whose surface is thermally oxidized;
[0031] (2) Photolithography: Photolithography forms patterns;
[0032] (3) Metal deposition: The metal Nb superconducting film (100nm thick) is deposited by electron beam evaporation or magnetron sputtering, and the thickness of the film determines the accuracy of the sidewall size;
[0033] (4) Ultra-thin sidewall formation: use ion beam etching (IBE) to etch (starting power 500W, beam current 200mA, inclination angle 40 degrees, accelerating voltage 400V) Nb, and the metal forms ultra-thin sidewalls along the photoresist (20-50nm).
[0034] (5) Remove glue: clean and remove photoresist;
[0035] (6) Superconducting thin film deposition: another layer of superconducting Nb thin film is deposited.
[0036] (7) The electrode pattern is formed by photolithography, and Nb is etched by ICP to form the electrode of the nanobridge junction. The width of the obtained nanobr...
Embodiment 2
[0038] (1) Substrate selection: the substrate selects silicon dioxide whose surface is thermally oxidized;
[0039] (2) Photolithography: Photolithography forms patterns;
[0040] (3) Metal deposition: The metal Nb superconducting film (10nm thick) is deposited by electron beam evaporation or magnetron sputtering, and the thickness of the film determines the accuracy of the sidewall size;
[0041] (4) Ultra-thin sidewall formation: use ion beam etching (IBE) to etch (starting power 500W, beam current 200mA, inclination angle 40 degrees, accelerating voltage 400V) Nb, and the metal forms ultra-thin sidewalls along the photoresist (2-5nm).
[0042] (5) Remove glue: clean and remove photoresist;
[0043] (6) Superconducting thin film deposition: another layer of superconducting Nb thin film is deposited.
[0044] (7) The electrode pattern is formed by photolithography, and Nb is etched by ICP to form the electrode of the nanobridge junction. The width of the obtained nanobridg...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
width
aaaaa
aaaaa
Login to View More
Abstract
The invention relates to a method for preparing a planar superconducting nano-bridge junction. Photoetching is performed on the surface of a substrate to form a pattern, and then a metal film is deposited; the metal is etched by an ion beam, and the metal is formed along the side of the photoresist due to the phenomenon of reverse sputtering. The width of the bridge is the thickness of the back-sputtered metal film, so it can exceed the limit of photolithography; deposit superconducting film, photolithography, and etch to form electrodes at both ends of the bridge. The invention has the advantages of low cost, easy integration, high precision and the like.
Description
technical field [0001] The invention belongs to the field of preparation of Josephson junctions, in particular to a preparation method of a planar superconducting nano-bridge junction. Background technique [0002] Superconducting circuits include superconducting quantum interferometers (SQUIDs), single-flux quantum devices (SFQs) and other circuits using superconducting Josephson junctions. [0003] In the concept of quantum mechanics, when two metals are separated by a thin layer of insulator, current can pass between the metals. This "metal-insulator-metal" stack is usually called a tunnel junction. The current that flows is called tunneling current. If, in this stacked sandwich structure, one or both metals are superconductors, it is called a superconducting tunnel junction. According to the Josephson effect, in a superconducting tunnel junction, the insulating layer has some properties of a superconductor, but has weaker superconductivity compared to conventional supe...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More