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OLED display panel and manufacturing method thereof

A technology for display panels and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of display panel display performance degradation and achieve the effect of improving display quality

Pending Publication Date: 2020-09-22
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the structure of the top-emitting light-emitting device, the light is emitted from the top. Due to the light-sensitive characteristics of the active layer in the thin film transistor (Thin Film Transistor, TFT), the performance of the TFT is easily affected by the external ambient light and the active driving of organic light-emitting devices. The influence of self-luminescence of the device (AM-OLED), etc., leads to a decrease in the display performance of the display panel

Method used

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  • OLED display panel and manufacturing method thereof
  • OLED display panel and manufacturing method thereof
  • OLED display panel and manufacturing method thereof

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Embodiment Construction

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0035] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The invention discloses an OLED display panel and a manufacturing method thereof, the OLED display panel comprises a TFT substrate and an OLED device on the TFT substrate, and the TFT substrate comprises a substrate; an active layer which is arranged overthe substrate; a gate insulating layer and agate which are sequentially arranged overthe active layer; alight absorption layer which is arrangedoverthe active layer and covers the gate insulation layer and the gate; and asource electrode and adrain electrode which are arranged overthe light absorption layer. The light absorption layer is provided with a contact hole, and the source electrode and the drain electrode are in contact with the active layer through the contact hole. According to the OLED display panel, the light absorption layer is arranged in the TFT substrate and can absorb light entering the TFT substrate from the active layer, especially from the top surface and the side surface of achannel region sensitive to light, sothat influence of light on the electrical property of the TFT is avoided more strictly, and the display quality of the OLED display panel is improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an OLED display panel and a manufacturing method thereof. Background technique [0002] Organic Light Emitting Diode (OLED) has gradually become the focus of research in the display field due to its technical advantages such as high brightness, self-luminescence, fast response, and low driving voltage. According to different directions of light emission, OLED devices include two structures, bottom emission and top emission. With the development of display technology, top-emitting light-emitting devices have attracted attention due to their good device stability and rectification ratio. Compared with the light-emitting mode of the bottom-emission light-emitting device, the light radiation of the top-emission light-emitting device is emitted from the top, which is not affected by the aperture ratio of the pixel. However, in the structure of the top-emitting light-emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/32H01L51/52H01L51/56
CPCH01L27/1214H01L27/1259H01L27/1248H10K59/124H10K50/865H10K71/00
Inventor 林高波
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD