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Electronic device

An electronic device and electric current technology, applied in the electronic field, can solve problems such as the small range of SOA

Pending Publication Date: 2020-09-22
SEMICON COMPONENTS IND LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A high gain means that the transistor will operate efficiently, but a transistor with high gain can often mean that the range of SOA is less

Method used

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Examples

Experimental program
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Embodiment 1

[0040] Embodiment 1. As another example, the present disclosure includes a method of fabricating an electronic device, the method comprising etching a trench in a semiconductor substrate; forming a first gate oxide having a first thickness in the trench; applying a photoresist layer over the gate oxide; masking the first section of the photoresist in the trench; removing the photoresist from the unmasked second section; removing the first gate The pole oxide is removed from the second section; and a second gate oxide is formed within the trench to have a second thickness, wherein the second thickness is different from the first thickness.

Embodiment 2

[0041] Embodiment 2. The method of embodiment 1, comprising depositing a polysilicon trench isolation structure within the trench.

Embodiment 3

[0042] Embodiment 3. The method of embodiment 2, comprising depositing an oxide around the polysilicon trench isolation structure.

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Abstract

The invention discloses an electronic device. The electronic device has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drainto the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section comprising a first thickness, and a second gate insulator section comprising a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.

Description

technical field [0001] The present invention relates to the field of electronic technology, and more specifically, to an electronic device. Background technique [0002] In the design of semiconductor devices, such as transistors, there are conflicting interests related to gain and safe operating area (SOA) performance. The safe operating area is defined as the voltage and current conditions under which the device can be expected to operate without self-damage. A high gain means that the transistor will operate efficiently, but a transistor with high gain may generally mean that the range of SOA is small. Contents of the invention [0003] An embodiment of the present invention provides an electronic device, the electronic device includes: a first gate electrode, the first gate electrode is used to supply a gate voltage; a source; a drain; a channel, the channel is doped an impurity that enables current to flow from the drain to the source when a voltage is applied to th...

Claims

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Application Information

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IPC IPC(8): H01L29/423
CPCH01L29/42368H01L29/7813H01L29/7828H01L29/407H01L29/66734H01L29/7816H01L29/41766H01L29/7802H01L29/42364H01L29/66727H01L29/1095H01L21/76224H01L29/7926H01L29/7827H10B63/34
Inventor B·帕德玛纳伯翰P·文卡特拉曼Z·豪森唐纳德·扎里姆巴戈登·M·格里芙尼亚亚历山大·杨
Owner SEMICON COMPONENTS IND LLC