Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-performance wafer-level lead sulfide near-infrared photosensitive film and preparation method thereof

A near-infrared light and thin film preparation technology, which is applied in vacuum evaporation plating, coating, electric solid devices, etc., can solve the problems of lack of reproducibility and low sensitivity

Active Publication Date: 2021-07-06
DALIAN UNIV OF TECH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing physical processes for preparing PbS thin films, such as thermal evaporation, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, etc., not only have low sensitivity of PbS detectors (an order of magnitude lower than CBD process devices) , and the lack of reproducibility has become the biggest technical barrier to the industrial application of physical preparation technology (J.V.Morgan, U.S.3,026,218,1962

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance wafer-level lead sulfide near-infrared photosensitive film and preparation method thereof
  • High-performance wafer-level lead sulfide near-infrared photosensitive film and preparation method thereof
  • High-performance wafer-level lead sulfide near-infrared photosensitive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] S1 Place 3-inch ordinary glass in acetone, ethanol, and deionized water for 10 minutes, and then place it in concentrated sulfuric acid for 2 hours. Ultrasonic cleaning in water for 10 minutes, after drying, a glass wafer substrate with a clean surface was obtained;

[0044] S2 Send the clean glass wafer substrate into the PbS evaporation reaction chamber until the vacuum degree reaches 5×10 -4After Pa, after raising the substrate temperature to 50 °C, gradually increase the PbS source temperature to the eruption temperature. Then introduce the chlorine gas with a flow rate of 10 sccm, and adjust the vacuum system suction so that the vacuum degree in the reaction chamber is maintained at 2 × 10 -2 Pa. After stabilization, open the growth shutter and start the PbS thin film deposition. After 2 hours, close the baffle, stop the PbS source and the substrate heating power supply, and stop the input of chlorine gas. The film thickness was 1.2 microns. The PbS deposition...

Embodiment 2

[0047] S1 Place the high-resistance silicon wafer in a high-temperature furnace for high-temperature oxidation thermal cleaning. The thermal cleaning temperature is 600° C., the thermal cleaning time is 3 hours, and the oxygen flow rate is 10 sccm.

[0048] S2 sends the clean Si wafer into the PbS evaporation reaction chamber, and waits until the vacuum degree reaches 5×10 -4 After Pa, after raising the substrate temperature to 50 °C, gradually increase the PbS source temperature to the eruption temperature. Then introduce the chlorine gas with a flow rate of 10 sccm, and adjust the vacuum system suction so that the vacuum degree in the reaction chamber is maintained at 2 × 10 -2 Pa. After stabilization, open the growth shutter and start PbS deposition. After 2h, close the baffle, PbS source and substrate heating power supply, and stop the input of chlorine gas. The film thickness was 1.2 microns. The PbS deposition rate was 0.6 microns / hour.

[0049] S3 Place the PbS th...

Embodiment 3

[0051] S1 Place a 3-inch ordinary glass wafer in acetone, ethanol, and deionized water for 10 minutes, and then place it in concentrated sulfuric acid for 2 hours. Ultrasonic cleaning in deionized water for 10 min, followed by drying to obtain a glass wafer substrate with a clean surface.

[0052] S2 sends the clean glass substrate into the PbS evaporation reaction chamber until the vacuum degree reaches 2×10 -4 After Pa, after raising the substrate temperature to 50 °C, gradually increase the PbS source temperature to the eruption temperature. Introduce the flow rate subsequently and be the chlorine gas of 25sccm, and adjust the suction of the vacuum system so that the vacuum degree in the reaction chamber is maintained at 5×10 -2 Pa. After stabilization, open the growth shutter and start PbS deposition. After 3 hours, close the baffle, PbS source and substrate heating power supply, and stop the input of oxidant. The film thickness was 1.2 microns. The PbS deposition rat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A high-performance wafer-level lead sulfide near-infrared photosensitive film and a preparation method thereof belong to the field of optoelectronic devices. First, clean the surface of the selected base material. Secondly, under high background vacuum, the vaporized oxidant is introduced into the vacuum evaporation chamber, and the PbS film is slowly deposited on the surface of the clean substrate to obtain a microstructure with moderate particles, loose structure and consistent orientation. Finally, under certain temperature and pressure conditions, the carrier gas carried iodine vapor to sensitize the PbS film described in S2 to obtain a high-performance wafer-level PbS photosensitive film. The preparation method of the present invention is simple, the preparation cost is low, and the repeatability is good, and the preparation of the wafer-level PbS photosensitive film can be realized, which is beneficial to large-scale commercial production; the photoelectric detection rate of the prepared PbS photosensitive film is high, and the peak detection rate of the 600K black body at room temperature is >8× 10 10 Jones; The surface of the PbS photosensitive film prepared by the invention is smooth, and the corresponding inhomogeneity in the wafer-level photosensitive surface is less than 5%, which meets the requirements of preparing a PbS million-pixel-level array imaging system.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and relates to a photosensitive thin film of an infrared photoconductive detector and a preparation method thereof. Specifically, it refers to preparing a lead sulfide (PbS) photosensitive film sensitive to near-infrared (1-3 μm) radiation by vacuum physical low-temperature oxidation deposition technology. The high performance mentioned means that the room temperature peak detection rate (D*) is not lower than 8×10 10 Jones. Background technique [0002] The infrared focal plane detector converts invisible infrared radiation into visible images, and is the core component for detecting, identifying and analyzing infrared information of objects. Uncooled infrared detectors do not require refrigeration devices and can work at room temperature. They have the advantages of small size, light weight, low power consumption, long life, low cost, and fast startup. They are widely used in industrial ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/26C23C14/30C23C14/35C23C14/58H01L31/032H01L31/18
CPCC23C14/0623C23C14/26C23C14/30C23C14/35C23C14/5846H01L31/18H01L31/0324H01L31/09H01L31/1828H01L27/14649H01L27/14692C23C14/021C23C14/0057C23C14/5853
Inventor 邱继军骆英民边继明
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com