35results about How to "Facilitate large-scale commercial production" patented technology

A processing method for spicy vegetarian meat, which is completed in eight steps including rehydration, freezing, thawing, preparation of marinade, pickling, frying, preparation of ingredients, and seasoning. The protein meat is rolled and marinated, then fried for a while, and then seasoned with Tujia special seasoning. The color of the soy vegetarian meat is bright red and even, and the seasoning goes deep into the inner layer. It is spicy, strong and delicious. Delicious; there are only plant additives in the whole process, not only seasoning, but also extending the shelf life, achieving the same purpose of using quality-preserving additives; it is a popular product, ready to eat after opening the bag, which is convenient for large-scale commercial production.

The invention belongs to the related technical field of micro-nano manufacturing, and discloses an ultraviolet photoelectric detector and a preparation method thereof. The preparation method comprisesthe following steps: (1) preparing an electrode layer on a silicon substrate with a silicon nitride insulating layer through employing a photoetching overlay technology and an evaporation coating technology; (2) preparing an ultraviolet detection thin film on the electrode layer, wherein the ultraviolet detection thin film is an Mn-doped CsPbBr3xCl3(1-x) ultraviolet detection thin film and is formed by sequentially evaporating a PbCl2 layer, a CsBr layer, a CsCl layer and a MnCl2 layer on the electrode layer, and x ranges from 0.05 to 0.1; (3) preparing a packaging protection layer on the ultraviolet detection film in a dispensing manner so as to package the ultraviolet detection film, thereby obtaining the ultraviolet photoelectric detector. According to the invention, the detector is lower in cost and easier to obtain, the preparation process is simpler, the light absorption coefficient is higher, the carrier transmission is faster, and the applicability is stronger.

A high-performance wafer-level lead sulfide near-infrared photosensitive film and a preparation method thereof belong to the field of optoelectronic devices. First, clean the surface of the selected base material. Secondly, under high background vacuum, the vaporized oxidant is introduced into the vacuum evaporation chamber, and the PbS film is slowly deposited on the surface of the clean substrate to obtain a microstructure with moderate particles, loose structure and consistent orientation. Finally, under certain temperature and pressure conditions, the carrier gas carried iodine vapor to sensitize the PbS film described in S2 to obtain a high-performance wafer-level PbS photosensitive film. The preparation method of the present invention is simple, the preparation cost is low, and the repeatability is good, and the preparation of the wafer-level PbS photosensitive film can be realized, which is beneficial to large-scale commercial production; the photoelectric detection rate of the prepared PbS photosensitive film is high, and the peak detection rate of the 600K black body at room temperature is >8× 10 10 Jones; The surface of the PbS photosensitive film prepared by the invention is smooth, and the corresponding inhomogeneity in the wafer-level photosensitive surface is less than 5%, which meets the requirements of preparing a PbS million-pixel-level array imaging system.

The invention relates to a light emitting display of multisurface combination single gate control double positive and negative semi-circle long edge cathode structure. The light emitting display comprises a vacuum chamber composed of an upper flat anti-pressure glass plate, a lower flat anti-pressure glass plate and a transparent glass frame, a transparent square anode layer, a silver anode extension layer connected with the transparent square anode layer and a luminous layer prepared on the transparent square anode layer are arranged on the upper flat anti-pressure glass plate, the multisurface combination single gate control double positive and negative semi-circle long edge cathode structure is arranged on the lower flat anti-pressure glass plate, and a getter and black support wall ancillary components are arranged in the vacuum chamber. The light emitting display of the multisurface combination single gate control double positive and negative semi-circle long edge cathode structure has the advantages that the production process is stable and reliable, the production cost is low, the glow brightness is high, and the adjustability of display gray scales is good.

The invention discloses an undoped organic small molecule hole transport material, a perovskite solar cell and a preparation method and application thereof. The above-mentioned undoped organic small molecule hole transport material, as the material of the hole transport layer of the perovskite solar cell, is very beneficial to the extraction of holes in the light absorption layer of the perovskite, without the need for steps such as doping and oxidation, which improves the device performance. The stable, low-cost and high-quality thin film properties are expected to facilitate the large-scale commercial production of perovskite solar cells.

The invention belongs to the technical field of macromolecule materials, and discloses a transparent permanent antistatic PMMA material and a preparation method and application thereof. The material is prepared from, by weight, 50-110 parts of PMMA, 2-45 parts of an antistatic agent, 0-8 parts of a flexibilizer, 0-1 part of a stabilizer and 0.1-1 part of an antioxygen. The prepared transparent permanent antistatic PMMA material has the advantages that preparation is simple, forming and processing performance is good, and the material can be adopted for preparing dust-proof and antistatic workpieces or packing materials through processing forming modes of injection molding, curtain coating and the like.

The invention belongs to the technical field related to micro-nano manufacturing, and discloses a method for preparing a perovskite solar cell based on nickel-doped titanium dioxide. The method includes the following steps: (1) cleaning the conductive substrate; (2) using a water bath method Depositing a nickel-doped titanium dioxide film of rutile phase on the conductive substrate to form a photoanode, the annealing temperature is 450° C. to 500° C.; (3) spin-coating a perovskite precursor solution on the surface of the photoanode, and performing Heat treatment to obtain the light-absorbing layer; (4) vapor-deposit a layer of copper phthalocyanine on the surface of the light-absorbing layer to form a hole transport layer; A carbon counter electrode layer is formed on the hole transport layer, thus ending. The invention also relates to perovskite solar cells based on nickel-doped titanium dioxide. The invention reduces the production cost, greatly improves the performance and stability of the battery, and is beneficial to the large-scale commercial production of the battery.

The process of preparing 3-trifluoromethyl benzoic acid includes the following steps: preparing meta-bis(trichloro methylbenzene) through the reaction of metaxylene and chlorine in meta-bis(trichloro methylbenzene) solvent under the action of initiator or photoinitiator; preparing meta-trichloromethyl trifloromethyl benzene through the fluoridation of meta-bis(trichloro methylbenzene) and hydrogen fluoride in the presence of catalyst, and preparing 3-trifluoromethyl benzoic acid through the hydrolysis reaction of meta-trichloromethyl trifloromethyl benzene in the presence of zinc-containing catalyst and water.

This invention relates to a field emission panel display with a shield electrode structure and its manufacturing technology including a closed vacuum cavity composed of a cathode panel, an anode panel and a surrounding glass frame, among which, a printed carbon nm tube cathode, a grating for controlling its electronic emission and a bracing wall structure are set on the cathode panel, a photoetched SnIn oxide film layer and a fluorescent powder layer prepared on it are set on the anode panel and a shielding electrode structure for shielding second time electronic emission is set in the vacuum cavity.

The invention provides a high-rolling-capacity magnesium-rare earth alloy and a preparation method thereof. The magnesium-rare earth alloy comprises the following elements in percentage by mass: 4.8-5.2% of Gd, 2.3-2.8% of Y, 1.9-2.3% of Zn, 0.8-1.2% of Al, inevitable impurities of Fe, Cu, Ni and Si less than 0.03%, and the balance of Mg. The preparation method comprises the following steps: pure Mg, pure Zn, pure Al, a Mg-Gd intermediate alloy and a Mg-Y intermediate alloy are used as raw materials, are molten for stirring, refining and slagging, are cooled after insulation and standing, and are cast as a magnesium alloy cast blank or magnesium alloy ingot; and the magnesium alloy cast blank or magnesium alloy ingot is hotly rolled on a rolling mill to prepare the magnesium-rare earth alloy after homogenization. The novel low-cost and high-rolling-capacity magnesium-rare earth alloy, provided by the invention, is excellent in comprehensive mechanical performance, and can serve as a high-strength structural material for use.