Ultraviolet photoelectric detector and preparation method thereof

A technology of electrical detectors and ultraviolet light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of reducing carrier mobility and photoresponse speed, unfavorable perovskite thin films, and difficult material synthesis, etc., to achieve current-carrying The effect of long diffusion distance, fast carrier transport, and large grain size

Active Publication Date: 2019-11-05
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0005] All inorganic wide bandgap CsPbX 3 Perovskite materials have brought new opportunities for the development of ultraviolet light detection technology, but traditional perovskite nanocrystalline films are mostly prepared based on solution methods, and there are CsPbX 3 Material synthesis is difficult (such as quantum dot synthesis), the prepared CsPbX 3 The problems of high film depth defect states (such as many Cl vacancies) and poor film formation (such as low continuity, small grain size, high grain boundary density), etc., these defects will significantly reduce the carrier mobility and photoresponse speed, and The solution process itself is not conducive to large-area CsPbX 3 Deposition of perovskite films limits fabrication of large-area UV detectors

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  • Ultraviolet photoelectric detector and preparation method thereof
  • Ultraviolet photoelectric detector and preparation method thereof
  • Ultraviolet photoelectric detector and preparation method thereof

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[0029] see figure 1 , the preparation method of the ultraviolet photodetector provided by the preferred embodiment of the present invention mainly includes the following steps:

[0030] Step 1, providing a silicon substrate with a silicon nitride insulating layer, and cleaning the silicon substrate.

[0031] Specifically, a silicon substrate with a silicon nitride insulating layer is provided, and the silicon substrate is ultrasonically cleaned with detergent, acetone, ethanol, and deionized water for 15 to 20 minutes; Blow dry, and then treat the silicon substrate with ultraviolet and ozone for 15-30 minutes.

[0032] Step 2, preparing an electrode layer on the silicon substrate by using a photolithographic overlay process and an evaporation coating process.

[0033] Specifically, an electrode layer is prepared on the silicon substrate by using a photolithographic overlay process and an evaporation coating process, the electrodes of the electrode layer are regularly arrange...

Embodiment 1

[0041] The preparation method of the ultraviolet photodetector provided by the first embodiment of the present invention mainly includes the following steps:

[0042] S1, providing a silicon substrate with a silicon nitride insulating layer, and cleaning the silicon substrate.

[0043] Specifically, a silicon substrate with a silicon nitride insulating layer is provided, and the silicon substrate is ultrasonically cleaned with detergent, acetone, ethanol, and deionized water for 15 minutes; then, the silicon substrate is blown dry with nitrogen gas flow , and then UV-ozone treatment was performed on the silicon substrate for 15 minutes.

[0044] S2, preparing an electrode layer on the silicon substrate by using a photolithographic overlay process and an evaporation coating process.

[0045] Specifically, an electrode layer was prepared on the silicon substrate by using a photolithographic overlay process and an evaporation coating process. The electrodes of the electrode laye...

Embodiment 2

[0052] The preparation method of the ultraviolet photodetector provided by the second embodiment of the present invention mainly includes the following steps:

[0053] B1, providing a silicon substrate with a silicon nitride insulating layer, and cleaning the silicon substrate.

[0054] Specifically, a silicon substrate with a silicon nitride insulating layer is provided, and the silicon substrate is ultrasonically cleaned with detergent, acetone, ethanol, and deionized water for 20 minutes; then, the silicon substrate is blown dry with nitrogen gas flow , and then UV-ozone treatment was performed on the silicon substrate for 30 minutes.

[0055] B2, preparing an electrode layer on the silicon substrate by using a photolithographic overlay process and an evaporation coating process.

[0056] Specifically, an electrode layer is prepared on the silicon substrate by using a photolithographic overlay process and an evaporation coating process, the electrodes of the electrode laye...

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Abstract

The invention belongs to the related technical field of micro-nano manufacturing, and discloses an ultraviolet photoelectric detector and a preparation method thereof. The preparation method comprisesthe following steps: (1) preparing an electrode layer on a silicon substrate with a silicon nitride insulating layer through employing a photoetching overlay technology and an evaporation coating technology; (2) preparing an ultraviolet detection thin film on the electrode layer, wherein the ultraviolet detection thin film is an Mn-doped CsPbBr3xCl3(1-x) ultraviolet detection thin film and is formed by sequentially evaporating a PbCl2 layer, a CsBr layer, a CsCl layer and a MnCl2 layer on the electrode layer, and x ranges from 0.05 to 0.1; (3) preparing a packaging protection layer on the ultraviolet detection film in a dispensing manner so as to package the ultraviolet detection film, thereby obtaining the ultraviolet photoelectric detector. According to the invention, the detector is lower in cost and easier to obtain, the preparation process is simpler, the light absorption coefficient is higher, the carrier transmission is faster, and the applicability is stronger.

Description

technical field [0001] The invention belongs to the technical field related to micro-nano manufacturing, and more specifically relates to an ultraviolet photodetector and a preparation method thereof. Background technique [0002] Photodetectors are an important part of optoelectronic systems and are widely used in national defense and daily life. In recent years, ultraviolet detection technology (10nm ~ 40nm) has become another extremely important photoelectric detection technology besides laser detection and infrared detection. Cosmic space, flames, gas pollutant molecules and power line corona will produce ultraviolet radiation. Ultraviolet detection technology has important application value and broad application prospects in the fields of space technology, space early warning, communication, biology and civilian detection. [0003] Traditional ultraviolet photodetectors are mainly divided into two categories: photoemission ultraviolet detectors and semiconductor ultrav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/101H01L31/0352H01L31/0203H01L31/18
CPCH01L31/0203H01L31/032H01L31/0321H01L31/0352H01L31/101H01L31/1876Y02P70/50
Inventor 廖广兰刘星月刘智勇谭先华孙博史铁林
Owner HUAZHONG UNIV OF SCI & TECH
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