Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of CuFeSb thin film

A thin-film preparation and thin-film technology, which is applied in the field of CuFeSb thin-film preparation, can solve the problems of single control means and no obvious control effect.

Active Publication Date: 2020-09-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the research on the physical properties and regulation of CuFeSb is mainly carried out on polycrystalline samples. Doping chemical elements on polycrystalline samples is the most important method of regulation. The regulation method is single, and no obvious regulation effect has been achieved yet.
Experimentally, it is also impossible to perform multi-dimensional external field regulation on polycrystalline samples. For example, while introducing substrate stress to modulate the physical properties of the film, the gate voltage is applied to the film sample to introduce electric field effects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of CuFeSb thin film
  • Preparation method of CuFeSb thin film
  • Preparation method of CuFeSb thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0047] The embodiment of the present invention provides a kind of CuFeSb film preparation method, such as figure 1 As shown, the method includes the following steps:

[0048] S1. Prepare CuFeSb polycrystalline target;

[0049] S2. Provide a cubic or tetragonal single crystal substrate;

[0050] S3. Cleaning the single crystal substrate;

[0051] S4. Annealing the cleaned single crystal substrate;

[0052] S5. Ablating the CuFeSb polycrystalline target, and growing a CuFeSb thin film on the surface of the single crystal substrate.

[0053] In the embodiment of the present invention, the basic principle and process of using the pulsed laser deposition method to prepare thin films is that the focused laser beam interacts with the target to generate plasma, and the plasma is transported in space to form a highly oriented plume, which carries The high-energy particles condense on the substrate to form a thin film. Therefore, the acquisition of the target is the first step in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a CuFeSb thin film. The method comprises the following steps that S1, a CuFeSb polycrystalline target material is prepared; S2, a cubic or tetragonal crystal type single crystal substrate is provided; S3, cleaning treatment is carried out on the single crystal substrate; S4, annealing treatment is carried out on the cleaned single crystal substrate;and S5, the CuFeSb polycrystalline target material is ablated, and the CuFeSb thin film is grown on the surface of the single crystal substrate. According to the preparation method, a pulse laser deposition technology is utilized, the CuFeSb thin film with the out-of-plane height orientation can be prepared through high vacuum equipment, excimer laser hardware, polycrystalline target material synthesis, substrate selection, substrate treatment and stable control over thin film synthesis parameters, and research on CuFeSb physical properties is promoted; and compared with a polycrystalline material, the thin film has great advantages, the means of CuFeSb physical property regulation and control are expanded, and great value in basic research and magnetic material application of the materialis achieved.

Description

technical field [0001] The invention relates to the field of material synthesis, in particular to a method for preparing a CuFeSb thin film. Background technique [0002] Iron-based superconductors are the second largest family of high-temperature superconductors after copper-based high-temperature superconductors discovered in 2008. Its discovery broke the myth that iron elements are not conducive to the formation of superconductivity. The crystal structure, magnetic structure and electronic state diagram of the iron-based superconductor system and the copper-based superconductor are very similar, especially the structure of the iron-based superconductor is similar to the copper-oxygen plane of the high-temperature superconductor, and superconductivity occurs on the iron-based plane , a two-dimensional superconducting material. Therefore, the research on iron-based superconductivity will help to promote the solution process of high-temperature superconductivity mechanism. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/28C23C14/18C23C14/02C22C30/02C22C1/04
CPCC22C1/04C22C30/02C23C14/02C23C14/18C23C14/28
Inventor 李卓君牟刚徐丽璇季秋骋宋叶凯彭炜
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products