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Magnetic memory device

A magnetic storage and magnetic layer technology, applied in the manufacture/processing of electromagnetic devices, resistors controlled by magnetic fields, components of electromagnetic equipment, etc.

Pending Publication Date: 2020-09-29
KIOXIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, due to defects or crystal grain boundaries contained in the tunnel barrier layer, it cannot be said that a tunnel barrier layer having excellent characteristics can always be obtained.

Method used

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  • Magnetic memory device
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Experimental program
Comparison scheme
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Embodiment Construction

[0013] Embodiments will be described below with reference to the drawings.

[0014] figure 1 is a cross-sectional view schematically showing the configuration of the magnetic memory device according to the embodiment.

[0015] Such as figure 1 As shown, a laminated structure 10 functioning as a magnetoresistance effect element is provided on an underlying structure (not shown) including a semiconductor substrate, transistors, wiring, and the like. A lower electrode (bottom electrode) 21 and an upper electrode (top electrode) 22 are connected to both ends of the laminated structure 10 . In addition, the magnetoresistance effect element is also called an MTJ (magnetic tunnel junction, magnetic tunnel junction) element. The stacked structure 10 includes a storage layer (first magnetic layer) 11 , a reference layer (second magnetic layer) 12 , and a tunnel barrier layer (nonmagnetic layer) 13 .

[0016] The storage layer (first magnetic layer) 11 has a variable magnetization d...

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PUM

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Abstract

Embodiments provide a magnetic memory device including a magnetoresistive effect element provided with a tunnel barrier layer having excellent characteristics. According to one embodiment, the magnetic memory device includes a stacked structure (10). The laminated structure is provided with a first magnetic layer (11) having a variable magnetization direction, a second magnetic layer (12) having afixed magnetization direction, and a non-magnetic layer (13) that is provided between the first magnetic layer and the second magnetic layer and contains magnesium (Mg) and oxygen (O). The non-magnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H), and lithium (Li).

Description

[0001] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2019-052166 (filing date: March 20, 2019). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0002] Embodiments of the present invention relate to magnetic memory devices. Background technique [0003] A magnetic memory device using a magnetoresistive element as a memory element has been proposed. Generally, a magnetoresistance effect element is composed of a stacked structure including a storage layer, a reference layer, and a tunnel barrier layer provided between the storage layer and the reference layer. [0004] In order to obtain a magnetoresistive element having excellent characteristics, it is important to improve the characteristics of the tunnel barrier layer. [0005] However, due to defects or crystal grain boundaries contained in the tunnel barrier layer, it cannot be said...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12H10N50/80H10N50/01H10N50/10
CPCH10N50/85H10N50/10H10N50/01H10B61/00H10N50/80
Inventor 大坊忠臣中崎靖甲斐正河合宏树石原贵光伊藤顺一
Owner KIOXIA CORP