Magnetic memory device
A magnetic storage and magnetic layer technology, applied in the manufacture/processing of electromagnetic devices, resistors controlled by magnetic fields, components of electromagnetic equipment, etc.
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[0013] Embodiments will be described below with reference to the drawings.
[0014] figure 1 is a cross-sectional view schematically showing the configuration of the magnetic memory device according to the embodiment.
[0015] Such as figure 1 As shown, a laminated structure 10 functioning as a magnetoresistance effect element is provided on an underlying structure (not shown) including a semiconductor substrate, transistors, wiring, and the like. A lower electrode (bottom electrode) 21 and an upper electrode (top electrode) 22 are connected to both ends of the laminated structure 10 . In addition, the magnetoresistance effect element is also called an MTJ (magnetic tunnel junction, magnetic tunnel junction) element. The stacked structure 10 includes a storage layer (first magnetic layer) 11 , a reference layer (second magnetic layer) 12 , and a tunnel barrier layer (nonmagnetic layer) 13 .
[0016] The storage layer (first magnetic layer) 11 has a variable magnetization d...
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