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Reliability test method and system for power semiconductor device

A technology of power semiconductors and test systems, which is applied in the field of power electronics and can solve problems such as inapplicability

Active Publication Date: 2020-10-13
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the actual application proves that the existing THB standard test is not applicable under harsher application environment conditions (such as tropical regions)

Method used

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  • Reliability test method and system for power semiconductor device
  • Reliability test method and system for power semiconductor device

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Embodiment Construction

[0027] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0028] Also, in the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without the specific details or in the particular manner described.

[0029] In addition, the steps shown in the flow dia...

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Abstract

The invention discloses a reliability test method and system for a power semiconductor device, and the method comprises the steps: adjusting the temperature of an environment where a to-be-tested power semiconductor device is located to a preset test temperature, setting and adjusting the relative humidity to a preset relative humidity, and applying a first preset bias voltage to the to-be-testedpower semiconductor device for a first preset duration; enabling the to-be-tested power semiconductor device to recover to a normal-temperature static test environment; and after recovery is completed, applying a second preset bias voltage to the to-be-tested power semiconductor device for a second preset duration, measuring the leakage current of the to-be-tested power semiconductor device to obtain a first leakage current, and determining the fault state of the to-be-tested power semiconductor device according to the first leakage current. According to the method, the reliability of the semiconductor device working in a high-humidity environment for a long time can be effectively evaluated and inspected, so that a reference is provided for a designer to select a proper device, the product can better meet the field application requirement, and high-reliability application is ensured.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a reliability testing method and system for power semiconductor devices. Background technique [0002] Power semiconductor devices (such as IGBT modules), as the core devices of new converters, have been widely used in locomotive traction, heavy-duty drives, power transmission / distribution, and renewable energy generation (wind power generation and conversion, etc.) and other fields. [0003] Most of these applications are affected by harsh environmental conditions, especially humidity. The quality and reliability of power semiconductor devices are of paramount importance since these devices are often used in exposed or critical applications. Furthermore, power semiconductor devices play a key role in the application. At present, the classic THB test method is generally used to test the reliability of power semiconductor devices in a humidity environment. However, th...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2642
Inventor 谢岳城陈明翊廖军丁云彭银中邹杰陈玉其
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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