Resist stripping liquid composition, panel display substrate and manufacturing method thereof
A technology of stripping liquid and composition, which is applied in the direction of equipment, photoplate making process of patterned surface, optics, etc., can solve the problems such as the reduction of stripping property, and achieve the effects of improving volatilization loss, preventing the occurrence of excellent streaks, and excellent anti-corrosion ability Effect
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Embodiment 1~6 and comparative example 1~7
[0062] Examples 1-6 and Comparative Examples 1-7: Manufacture of resist stripping liquid composition
[0063] The components and contents described in the following Table 1 were mixed to prepare a resist stripping liquid composition.
[0064] [Table 1]
[0065]
[0066] A-1: 2-(2-(Hydroxymethylamino)ethoxy)ethanol
[0067] A-2: Ethylaminomethanol
[0068] A-3: N-(2-hydroxypropyl) aminomethanol
[0069] A-4: 2-Hydroxymethylaminoethanol
[0070] A-5: Diethanolamine
[0071] A-6: Monoethanolamine
[0072] A-7: Methylaminomethanol
[0073] A-8: N-Methylolacetamide
[0074] B-1: N-Methylpyrrolidone
[0075] B-2: N-ethylformamide
[0076] B-3: Dimethylsulfoxide
[0077] E-1: 4-Hydroxymethyl-1,3-dioxolane
[0078] E-2: Diethylene glycol monomethyl ether
[0079] E-3: Diethylene glycol monoethyl ether
[0080] D-1: 4-methyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole
[0081] D-2: Tolyltriazole
experiment example 1
[0082] Evaluation of peeling ability of cleaning solution
[0083] In order to confirm the stripping effect of the photoresist cleaning compositions of the above-mentioned examples and comparative examples, a photoresist was uniformly coated on a 10*10cm glass with a film thickness of 1.2 μm by a spin coater, and then heated at 150° C. Implement the 10min baking process, cut into 2*2cm, and prepare the substrate. After maintaining the temperature at 50 degreeC constant about the composition for resist cleaning, the target object was immersed by dividing the immersion time, and peeling ability was evaluated. Thereafter, in order to remove the cleaning solution remaining on the substrate, cleaning was performed with pure water for 1 minute, and in order to remove the pure water remaining on the substrate after cleaning, the substrate was completely dried with nitrogen gas. The modified or cured resist and dry etching residue removal performance of the above-mentioned substrate...
experiment example 2
[0084] Evaluation of the peeling ability of the cleaning solution over time
[0085]The prepared experimental reagent was left at room temperature for one week, and then the peeling ability of the cleaning solutions of the above-mentioned examples and comparative examples was evaluated by the same method as in the experiment of . The results are shown in Table 2 below.
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