A method and apparatus for controlling programming performance

A performance and programming data technology, applied in the storage field, can solve problems such as temperature rise, programming effective current reduction, and inability to complete programming tasks, so as to achieve the effect of improving programming performance
CN111863082BActive Publication Date: 2022-08-09GIGADEVICE SEMICON (BEIJING) INC +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GIGADEVICE SEMICON (BEIJING) INC
Publication Date
2022-08-09

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Abstract

The present invention provides a method and apparatus for controlling programming performance. The method is applied to a NOR flash memory, the NOR flash memory includes: a temperature sensor, a clock frequency generator, a programming operation state machine and a programming storage unit, the programming operation state machine includes: a counter, and the method includes: a programming operation state machine Receive the programming operation instruction and the data to be programmed, and perform the programming verification and the programming press operation according to the programming operation instruction and the data to be programmed. The programming press operation includes: receiving the working temperature of the NOR flash memory sent by the temperature sensor, and adjusting the operating temperature according to the working temperature. time, according to the adjusted time to complete the programmed pressurization operation. In the present invention, when the programming pressing operation is performed, the programming operation state machine adjusts the time of a single programming pressing operation according to the working temperature of the NOR flash memory, completes the programming pressing operation, and controls the cycle period of the programming verification operation and the programming pressing operation. , to improve the programming performance of NOR flash memory.
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Description

technical field

[0001] The present invention relates to the field of storage, and in particular, to a method and device for controlling programming performance. Background technique

[0002] At present, NOR flash memory uses channel carrier hot electron injection to realize programming operation. The research results show that when the temperature increases, the hot electron activity increases, and the generated effective current for programming will decrease, and the required amount of programming required to complete the programming will be reduced. The time will be longer.

[0003] refer to figure 1 , shows a schematic diagram of the programming principle of the existing NOR flash memory. The programming operation is to inject hot electrons accelerated by a high electric field into the floating gate layer by hot electron injection, thereby changing the threshold of the floating gate layer to achieve the effect of programming. In order to form a conductive channel Road, ...

Claims

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