Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Scattered field solving method applied to simulated FSS structure

A technology of scattering fields and equations, applied in the field of electromagnetism, can solve the problems of small number of grids and memory overhead

Pending Publication Date: 2020-11-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned deficiencies in the prior art, the present invention provides a scattering field solution method for simulating FSS structures that solves the frequency offset problem of traditional VSIE, and has fewer grid numbers and memory overheads, and its iterative convergence The speed is also faster, and the present invention is suitable for solving more complex electrically large-scale FSS structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scattered field solving method applied to simulated FSS structure
  • Scattered field solving method applied to simulated FSS structure
  • Scattered field solving method applied to simulated FSS structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] The specific embodiments of the present invention are described below so that those skilled in the art can understand the present invention, but it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, as long as various changes Within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.

[0065] Such as figure 1 As shown, a scattering field solution method applied to simulate FSS structure includes the following steps:

[0066] S1. Establish the FSS geometric model according to the position of the FSS geometric model and the material parameters of the dielectric body, wherein the material parameters of the dielectric body include: dielectric constant and loss tangent, and the FSS geometric model includes: tw...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a scattered field solving method applied to a simulated FSS structure. Compared with a traditional triangular-tetrahedron and RWG-SWG primary function VSIE method for solving the scattering field, the method solves the problem of frequency deviation, the number of unknown quantities and the memory overhead of calculation can be greatly reduced, and meanwhile the solving efficiency is higher. According to the method, the design of the FSS structure can be guided more efficiently and accurately, analogue simulation of a large-scale array is facilitated, and the method haspractical engineering application value.

Description

technical field [0001] The invention relates to the field of electromagnetism, in particular to a method for solving a scattered field applied to a simulated FSS structure. Background technique [0002] Frequency selective surface (FSS) is widely used in stealth technology. It is a two-dimensional periodic structure, essentially a spatial filter, composed of resonant metal units periodically arranged. FSS has selective permeability to electromagnetic waves of different frequencies. It is usually divided into two types: patch type and aperture type. angle of incidence, etc. In practical engineering applications, FSS is usually composed of a metal plate and a dielectric substrate. On the one hand, the physical strength of the FSS is increased. On the other hand, the processing method of PBC plate or skin coating is used, and the manufacturing process is relatively easier. There are generally two ways to load the medium: one is unilateral loading, and the metal FSS is attache...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F30/20G06F17/11
CPCG06F30/20G06F17/11
Inventor 何十全张天成
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com