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A method for estimating the junction temperature of igbt modules in the state of solder aging

An aging state, solder technology, applied in the direction of calculation, design optimization/simulation, computer-aided design, etc., can solve the problems of junction temperature estimation deviation, real-time offset of heat transfer path not considered, to improve accuracy, improve evaluation accuracy and The effect of strategic rationality

Active Publication Date: 2022-05-17
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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Problems solved by technology

However, the influence of the above mechanism on the model parameters is often ignored in the modeling process of the Cauer thermal network model, resulting in deviations in junction temperature estimation.
[0003] In the prior art, for example, a circuit system and method for online estimation of IGBT module junction temperature disclosed in Chinese patent CN110988641A, although the method updates the parameters of the thermal network model in stages, the method in this patent does not consider heat transfer The problem of real-time offset of the path

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  • A method for estimating the junction temperature of igbt modules in the state of solder aging
  • A method for estimating the junction temperature of igbt modules in the state of solder aging
  • A method for estimating the junction temperature of igbt modules in the state of solder aging

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[0050] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0051] A method for estimating junction temperature of IGBT modules based on self-adaptive heat transfer path correction under solder aging state, the process is as follows figure 1 shown, including:

[0052] Step 1: Obtain the geometric structure parameters and material characteristic parameters of the IGBT module;

[0053]The geometric structure parameters of the IGBT module include the side length and thickness of each physical layer after depackaging ...

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Abstract

The invention relates to a method for estimating the junction temperature of an IGBT module in a solder aging state, comprising: step 1: obtaining geometric structure parameters and material characteristic parameters of the IGBT module; step 2: establishing a fixed-angle thermal diffusion model based on the geometric parameters and heat transfer performance; Step 3: Obtain the environmental information of the IGBT module; Step 4: Obtain the monitoring parameters of the solder aging state according to the environmental information of the IGBT module; Step 5: Establish the Cauer thermal network model of the temperature-related characteristics of the IGBT module material; Step 6: Quantify through the aging monitoring parameters The influence of solder aging on the internal heat transfer path, the actual heat transfer area is obtained, and the parameters of the thermal network model are updated; Step 7: Real-time estimation of the junction temperature of the IGBT module based on the Cauer thermal network model and the feedback junction temperature. Compared with the prior art, the invention has the advantages of high junction temperature estimation result accuracy, effectively improved evaluation accuracy and strategy rationality, and the like.

Description

technical field [0001] The invention relates to the technical field of IGBT module junction temperature estimation, in particular to an IGBT module junction temperature estimation method for self-adaptive heat transfer path correction in a solder aging state. Background technique [0002] As the core semiconductor device of modern power electronic devices and systems, the reliability of the insulated gate bipolar transistor (IGBT) determines the overall stability of the system. Junction temperature is a key state characteristic quantity for reliability prediction, and its dynamic response can effectively evaluate the actual operating state of the module. However, the good sealing of packaging materials makes it difficult to directly measure the junction temperature. Usually, the RC thermal network model based on the electrothermal analogy theory is used to estimate it, which is divided into Foster thermal network model and Cauer thermal network model. Different from the Fos...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/23G06F119/08G06F119/04
CPCG06F30/23G06F2119/08G06F2119/04Y02E60/00
Inventor 崔昊杨滕佳杰江友华唐忠秦伦明曹以龙朱武
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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