Electrostatic discharge protection circuit

Abstract

The invention discloses an electrostatic discharge protection circuit. The electrostatic discharge protection circuit comprises an internal integrated circuit, a plurality of signal conversion circuits, a plurality of electrostatic protection modules and wires among the electrostatic protection modules. The internal integrated circuit comprises a plurality of input / output interfaces with the samearray structure, one end of each signal conversion circuit is connected with one input / output interface, and the other end of each signal conversion circuit is connected with the external signal terminal; one end of each electrostatic protection module is connected with the external signal terminal; the signal conversion circuit and the electrostatic protection module which are connected with thesame external signal terminal at the same time are arranged in a non-corresponding mode. Through the electrostatic discharge protection circuit provided by the invention, the damage of electrostatic discharge to the signal conversion circuit can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an electrostatic discharge protection circuit. Background technique [0002] In recent semiconductor integrated circuits, an electrostatic discharge (ESD) protection line is provided between a signal input terminal and an internal chip in order to prevent electrostatic destruction caused by external static electricity or the like. In the prior art, the connection between the electrostatic protection circuits generally adopts the connection method of the smallest path, which easily causes the signal conversion circuit between the internal chip and the external signal to be damaged by static electricity, and cannot effectively protect the electrostatic shock, which affects the reliability of semiconductor devices. degree, reducing the lifetime of semiconductor devices. Contents of the invention [0003] The object of the present invention is to provide an electrostatic di...

AI Technical Summary

Problems solved by technology

In the prior art, the connection between the electrostatic protection circuits generally adopts the connection method of the smallest path, which easily causes the signal conversion circuit between the internal chip and the external signal to be damaged by static electricity, and cannot effectively protect the electrostatic shock, which affects the reliability of semiconductor devices. degree, reducing the lifetime of semiconductor devices

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