Soi field effect transistor with reduced side leakage and its preparation method

Abstract

The invention provides an SOI field effect transistor with reduced side leakage and a preparation method thereof. The transistor comprises: a patterned SOI substrate having a bottom substrate, an insulating layer and a top semiconductor layer in the form of a semiconductor island, and the insulating layer has a concave The groove, the groove includes a main body groove extending along the second direction and at least one extended groove extending along the first direction and located at both ends of the main body groove and communicating with it; the semiconductor island completely covers the groove, and the semiconductor island includes a groove along the second direction. A first semiconductor layer extending in one direction and a second semiconductor layer extending in a second direction, the second semiconductor layer includes a second body semiconductor layer located above the body groove and a second extension semiconductor layer covering the extension groove; formed in A gate structure on the second semiconductor layer of the semiconductor island; a source region and a drain region formed at both ends of the first semiconductor layer. By providing the two ends of the main body groove with the extended groove connected thereto, the leakage resistance is effectively increased, and the side leakage of the groove is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, and in particular relates to an SOI field effect transistor with reduced side leakage and a preparation method thereof. Background technique [0002] Field effect transistors on SOI substrates have good anti-single event effects, but because in the SOI structure, the insulating layer (BOX layer) tends to accumulate more positive charges when high-energy particles are incident, the positive charges are caused in the top silicon layer of SOI. The parasitic conductive channel is created, which introduces leakage current and makes the electrical performance of the device drift. This effect is called the total dose effect, and the total dose effect is the main reason for the failure of SOI transistors in the environment of high-energy particle irradiation. Contents of the invention [0003] In view of the shortcomings of the prior art described above, the purpose of the present i...

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Problems solved by technology

[0003] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a SOI field effect transistor with reduced side leakage and a preparation method thereof, which is used to solve the problem that the SOI field effect transistor has a large total dose effect in the prior art. Amplitude response causes problems such as leakage or even failure

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