Method for solving everse osmosis of single-sided diffusion back surface of silicon wafer
A technology of single-sided diffusion and diffusion surface, which is used in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc.
Inactive Publication Date: 2020-11-27
山东芯源微电子有限公司
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[0004] In view of the deficiencies and defects in the prior art, the purpose of the present invention is to provide a method for solving the problem of reverse osmosis on the back of the silicon wafer due to liquid or gaseous reverse osmosis substances in the single-sided diffusion. The problem of simultaneous diffusion
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[0013] In order to make the technical solutions and beneficial effects of the present invention clearer, the present invention will be further described in detail below in conjunction with specific examples.
[0014] figure 1 Schematic diagram of the implementation structure of the present invention; comprising a silicon wafer (2) and a diffusion source (1) attached to the diffusion surface of the silicon wafer (2), and also comprising an isolation film (3) attached to the protective surface of the silicon wafer (2), so The size of the isolation film (3) is exactly the same as that of the silicon wafer or 0.5-3 mm larger than that of the silicon wafer.
[0015] The isolation film (3) is a film formed by spraying and drying the slurry made of activated alumina powder and binder. According to the needs of actual production, when using, the isolation film (3) is pasted Put it on the surface of the silicon wafer (2) that needs to be protected, and then press it or squeeze it tigh...
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Abstract
The invention discloses a method for solving reverse osmosis of a single-sided diffusion back surface of a silicon wafer and mainly relates to the technical field of silicon wafer production. The device comprises a silicon wafer, a diffusion source tightly attached to the diffusion surface of the silicon wafer, and an isolating membrane tightly attached to the silicon wafer protection surface; theisolating membrane is a membrane-shaped object prepared by spraying, precipitating and drying slurry formed by mixing activated aluminum oxide powder and an adhesive; the activated aluminum oxide powder in the isolating membrane absorbs an inverse atmosphere, the problem that the same substances are diffused on the back surface at the same time is solved, and the back surface can be removed withreduced sand blowing or grinding or without sand blowing or grinding after diffusion.
Description
technical field [0001] The invention mainly relates to the technical field of silicon chip production and manufacturing, in particular to a method for solving the problem of reverse osmosis on the back side when the silicon chip is diffused on one side. Background technique [0002] Diffusion motion is the statistical result of thermal motion of microscopic particles, atoms or molecules. Impurity atoms have certain energy at a certain temperature and can overcome some resistance to enter the semiconductor and move slowly in it. The silicon wafer diffusion process is to put the silicon wafer into a high-temperature diffusion furnace, pass through nitrogen and other gases, and form a P-N junction on the surface of the silicon wafer after decomposition at high temperature. [0003] The silicon wafer diffusion process generally requires necessary design and diffusion on both sides, but in actual production, it needs to be executed one by one. In the high temperature process, du...
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IPC IPC(8): H01L21/683H01L21/225
CPCH01L21/2251H01L21/6835H01L2221/6834
Inventor 汪良恩王锡康姜兰虎孙爱华
Owner 山东芯源微电子有限公司