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Flash memory programming operation method and operation circuit

An operation method and a technology for operating circuits, which are applied in information storage, static memory, read-only memory, etc., can solve the problem of high programming power consumption, and achieve the effect of reducing occupation time and ensuring reliability.

Active Publication Date: 2020-12-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a flash memory programming operation method and an operating circuit, which can solve the problem of large programming power consumption in the related art when reducing the total time of erasing operation and programming operation

Method used

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  • Flash memory programming operation method and operation circuit
  • Flash memory programming operation method and operation circuit
  • Flash memory programming operation method and operation circuit

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Embodiment Construction

[0031] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0032] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention relates to the field of memories, in particular to a flash memory programming operation method and an operation circuit. The method comprises the steps: providing a pulse sequence signalto a bit line of a memory cell, wherein the pulse sequence signal includes a high level period and a low level period alternating in sequence in a time domain; under the control of the programming permission signal, enabling the storage unit to perform programming operation according to programming input data during a period of high level of the pulse sequence signal; enabling the storage unit toperform read detection operation during a low level period of the pulse sequence signal, wherein the read detection operation includes the operations: reading out data stored in a memory cell, and comparing whether the data read out during a low level period coincides with programming input data; if so, stopping the programming operation; otherwise, enabling the storage unit to perform programming operation again according to the programming input data in the next high-level period, and performing read detection operation in the subsequent low-level period. The circuit is used for executing the method.

Description

technical field [0001] The present application designs the field of memory, and specifically relates to a flash memory programming operation method and an operation circuit. Background technique [0002] Flash memory (Flash) is a non-volatile memory that can perform erase operations (Erase) and program operations (Program) on a block (sector). When performing an erase operation on a block, all bits in the block (bit) is erased to "1" state. When programming a block, some bits (bit) of the block are changed from "1" state to "0" state, and need to be Perform an erase operation to erase all bits to a "1" state. [0003] In many cases, such as when flash memory is used in a financial card, the total time required for erasing and programming a block is less than 1ms. For this reason, the method of reducing the programming operation time is usually used to reduce the erasing and programming time. The total time of the operation. [0004] However, the related technology general...

Claims

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Application Information

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IPC IPC(8): G11C16/10G11C16/24
CPCG11C16/10G11C16/24Y02D10/00
Inventor 黄明永
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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