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FPGA-based SRAM memory single particle and charge-discharge effect comprehensive test device

A charge-discharge effect, single-event effect technology, applied in static memory, instruments, etc., to achieve the effect of convenient use, reasonable structure, and improved accuracy

Active Publication Date: 2020-12-11
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS +1
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  • FPGA-based SRAM memory single particle and charge-discharge effect comprehensive test device

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[0033] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0034] Such as figure 1 According to a kind of FPGA-based SRAM memory single particle and charge-discharge effect comprehensive testing device provided by the present invention, comprising: PC, upper computer, lower computer, single-event effect simulation source, charge-discharge effect simulation source and electromagnetic shielding unit; The PC is connected to the upper computer through a serial port; the communication protocol of the serial port is RS232; the lower computer is placed in the simulati...

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Abstract

The invention provides an FPGA-based SRAM single event and charge-discharge effect comprehensive test device. The FPGA-based SRAM single event and charge-discharge effect comprehensive test device comprises a PC, an upper computer, a lower computer, a single event effect simulation source, a charge-discharge effect simulation source and an electromagnetic shielding unit, wherein the PC is connected with the upper computer through a serial port; the communication protocol of the serial port is RS232; the lower computer is arranged in a simulation source environment; the simulation source environment is a single event effect simulation source or a charging and discharging effect simulation source; the upper computer is connected with the lower computer through a high-frequency signal line. And the signal rate of communication between the upper computer and the lower computer is less than or equal to 50MHZ. Characteristic parameters of the single event effect and the charge-discharge effect of the SRAM, such as information parameters such as an overturning cross section, an overturning curve and an overturning threshold value, can be obtained under the irradiation condition of a laboratory simulation source, and the upper computer and the PC do not need to be replaced for different effects.

Description

technical field [0001] The present invention relates to the technical field of spacecraft space radiation effects and reinforcement, in particular, to a comprehensive testing device for single particle and charge and discharge effects of SRAM memory based on FPGA, in particular, to a method for detecting SRAM memory due to single event effect and charge and discharge A test system that causes internal storage data to flip. Background technique [0002] The SRAM device refers to Static Random-Access Memory (SRAM). The characteristic of this structure is that as long as the power is kept on, the internally stored data can be kept. When the power supply is lost, the stored data will also disappear. SRAM memory has been widely used in satellite electronic systems due to its advantages of fast reading and writing, large storage capacity, and low power consumption, such as memory for on-board computers and payload systems. However, the single event effect and charge-discharge eff...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/56
CPCG11C29/56
Inventor 苏京李秀伟徐骏周博曹康丽潘阳阳高冬冬费涛刘刚
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS