Semiconductor process assembly and semiconductor processing equipment

Abstract

The invention provides a semiconductor process assembly and semiconductor processing equipment. The semiconductor process assembly comprises a pressing ring which is used for pressing an edge region of an upper surface of a wafer when a substrate is located at a process position; an air inlet structure which is arranged below the pressing ring in the circumferential direction of the pressing ring,and when the base is located at the process position, a diffusion channel communicated with the upper space of the base exists between the air inlet structure and the pressing ring; besides, a plurality of air inlet channels are formed in the air inlet structure, and the air outlet ends of the air inlet channels communicate with the diffusion channel and are evenly distributed in the circumferential direction of the pressing ring; and the gas supply device is used for conveying process gas into all the gas inlet channels, and the process gas flows out of the gas inlet channels and then entersthe space above the base through the diffusion channels. According to the semiconductor process assembly, a problem of non-uniform plasma energy caused by different lengths of gas paths reaching thesurface of the substrate is solved.

Description

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AI Technical Summary

Benefits of technology

This technology improves the performance of processes for treating wafers during manufacturing. It includes various components like a pressure barrier or an air suction system, which help control how much material sticks on top of the substrate being treated while it moves across them. By pressing the edges of the upper surface (wafer) against this plate, the excess materials get removed from the surfaces before they hit other areas inside the chamber where chemicals react chemistry occurs. These technical improvements improve productivity without compromising quality.

Problems solved by technology

This patented describes how current methods involve injecting materials onto wafers during production processes where they play important roles. However, this method has drawbacks due to variations in ionized state caused by imperfections within the equipment itself. These issues affect the quality of resulting layers formed atop the waver.

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