Capacitor array, preparation method thereof and storage device

Abstract

The invention provides a capacitor array, a preparation method thereof and a storage device, and belongs to the technical field of semiconductors. The preparation method of the capacitor array comprises the following steps: providing a substrate comprising a gap region and a plurality of capacitor regions; forming shape defining layers on one side of the substrate, wherein a part of the shape defining layers in the capacitor regions protrude out of a part of the shape defining layers in the gap region; forming a first support material layer covering the shape defining layer; sequentially forming first sacrificial layers and a second support material layer; forming capacitor grooves in the capacitor regions, wherein the capacitor grooves penetrate through the first sacrificial layers, the first support material layer and the shape defining layers; forming first electrodes covering the inner surfaces of the capacitor grooves; sequentially removing part of the second support material layers, all the first sacrificial layers, part of the first support material layer and all the residual shape limiting layers; forming dielectric layers covering the first electrodes; forming second electrode layer covering the dielectric layers. The preparation method of the capacitor array can improve the stability of the capacitor array.

Description

Technical field[0001]The present disclosure relates to the field of semiconductor technology, and in particular to a capacitor array, a manufacturing method thereof, and a storage device.Background technique[0002]In order to increase the capacitance of the columnar capacitor, the columnar capacitor often increases the height of the lower electrode to enlarge the contact area between the lower electrode and the dielectric layer, so that the columnar capacitor has a high aspect ratio. At the same time, a strip-shaped fixed layer can be provided in the middle of the lower electrode to improve the stability of the columnar capacitor.[0003]As the aspect ratio of the columnar capacitor continues to increase, it is necessary to increase the contact area between the strip-shaped fixed layer and the lower electrode, otherwise the lower electrode is easily damaged due to insufficient contact area. However, due to the limitation of processes such as etching, it is difficult to increase the con...

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Problems solved by technology

However, limited by etching and other processes, it is difficult to increase the contact area between the strip-shaped pinned layer and the bottom electrode by increasing the thickness of the strip-shaped pinned layer.

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