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Semiconductor process chamber and supporting mechanism thereof

A technology of support mechanism and process chamber, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of temperature difference splinter, affecting the yield of epitaxial process, etc.

Pending Publication Date: 2021-01-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0003] The invention discloses a semiconductor process chamber and its supporting mechanism to solve the problem that in the current epitaxy process, cracks easily occur due to the large temperature difference between the upper and lower surfaces of the wafer, which seriously affects the yield rate of the epitaxy process.

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  • Semiconductor process chamber and supporting mechanism thereof
  • Semiconductor process chamber and supporting mechanism thereof
  • Semiconductor process chamber and supporting mechanism thereof

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Embodiment Construction

[0025] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] The technical solutions disclosed by various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] Such as Figure 1-Figure 7 As shown, the embodiment of the present invention discloses a support mechanism, which can be applied in a semiconductor process chamber. The supporting mecha...

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Abstract

The invention discloses a semiconductor process chamber and a supporting mechanism thereof. The supporting mechanism is used for supporting a to-be-processed semiconductor workpiece, and comprises a body part and a supporting part, wherein the body part is of an annular structure, and the supporting part is arranged on the inner side wall of the body part and is provided with a through hole. According to the technical scheme, the problem that the yield of the epitaxial process is seriously affected due to the fact that the wafer is prone to cracking due to large temperature difference betweenthe upper surface and the lower surface of the wafer in the current epitaxial process can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing equipment, in particular to a semiconductor process chamber and a supporting mechanism thereof. Background technique [0002] Epitaxial reaction is an important work in the process of semiconductor processing. During the process of epitaxial reaction, the temperature control of semiconductor plays an important role in the epitaxial reaction. With the development of technology, the size of the wafer is gradually increasing, making the temperature control accuracy more and more important. At present, a base of heat-conducting material such as graphite is usually used to support the wafer, and heating lamps are respectively arranged on the upper and lower sides of the base to heat the upper and lower surfaces of the wafer. Since the wafer is supported on the base, the base The heat is heated by the heating lamp, so that the base can transfer heat to the lower surface of the wafer th...

Claims

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Application Information

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IPC IPC(8): H01L21/687H01L21/67
CPCH01L21/67248H01L21/68785
Inventor 夏俊涵
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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