Semiconductor device packaging structure and semiconductor device packaging method

Abstract

The invention discloses a semiconductor device packaging structure and a semiconductor device packaging method. The packaging structure comprises: a semiconductor tube core, wherein the first end of the semiconductor tube core is provided with a front electrode, the second end of the semiconductor tube core is provided with a back electrode, and the first end is opposite to the second end; a graphene binding film; a packaging container which comprises a connecting plate and a side wall plate, wherein the side wall plate extends from the connecting plate and is bent, so that a packaging space is defined by the side wall plate and the connecting plate, the side wall plate comprises an outer leading end, the semiconductor tube core is arranged in the packaging space, and the second end of thesemiconductor tube core, the graphene combination film and the connecting plate are combined in sequence, and the back electrode is electrically connected with the outer leading end through the graphene bonding film and the connecting plate in sequence. In the packaging method, the semiconductor die is connected with the packaging container through the graphene bonding film. According to the invention, the thickness of the graphene bonding film can be more accurately controlled, the problems caused by too high welding corners can be overcome, and the packaging structure is high in reliabilityand high in packaging efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor device packaging structure and a semiconductor device packaging method. Background technique [0002] At present, in order to improve the heat dissipation performance of semiconductor devices, the semiconductor die is packaged in a cup-shaped packaging container to form a packaging structure, and the back of the semiconductor die is electrically connected to the packaging container through a conductive bonding material (such as conductive silver glue). The back electrode on the back of the semiconductor die is led out through the packaging container, and the heat dissipation performance of this packaging structure is good; in the packaging process of this packaging structure, it is necessary to control the thickness of the conductive bonding layer formed between the semiconductor die and the packaging container Within an appropriate range to ensure...

AI Technical Summary

Problems solved by technology

[0004] An object of the embodiments of the present invention is to provide a semiconductor device packaging structure, which can more accurately control the thickness of the graphene bonded film, and can overcome the problems caused by excessively high solder angles, and the reliability of the packaging structure is high.

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