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A device and method for improving the purity of aluminum nitride crystal growth raw materials

A technology of aluminum nitride and aluminum nitride ceramics, applied in chemical instruments and methods, post-processing devices, single crystal growth, etc., can solve problems affecting single crystal growth, carbon element entry, etc., and achieve the effect of improving quality

Active Publication Date: 2022-03-04
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention provides a device and method for improving the purity of aluminum nitride crystal growth raw materials, which can effectively isolate Ingress of carbon in the tantalum carbide crucible to improve the purity of the aluminum nitride raw material

Method used

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  • A device and method for improving the purity of aluminum nitride crystal growth raw materials
  • A device and method for improving the purity of aluminum nitride crystal growth raw materials

Examples

Experimental program
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Embodiment 1

[0026] Such as figure 1 As shown, the present invention is a device for improving the purity of aluminum nitride crystal growth raw materials, which is a composite structure, specifically comprising: a tantalum carbide sheet 1, a tantalum carbide crucible 2, a tantalum crucible 3 and a first tantalum disc 4, a tantalum carbide The inside of the crucible 2 is used to contain the aluminum nitride raw material 8 before the experiment, and it is a crystal growth area during the experiment. The tantalum carbide sheet 1 is covered on the top opening of the tantalum carbide crucible 2, and the tantalum carbide sheet 1 and the tantalum carbide crucible 2 have the same outer diameter, for example, the tantalum carbide sheet 1 and the tantalum carbide crucible 2 outer diameters are 2 inches, An aluminum nitride seed crystal 7 is pasted on the tantalum carbide sheet 1 , and the aluminum nitride seed crystal 7 is located in the tantalum carbide crucible 2 .

[0027] The tantalum carbide ...

Embodiment 2

[0031] Such as figure 2 As shown, Example 2 is prepared by using a device for improving the purity of aluminum nitride crystal growth raw materials described in Example 1.

[0032] A method for improving the purity of aluminum nitride crystal growth raw materials, the specific preparation process is as follows:

[0033] Step 1: Put the tantalum carbide crucible 2 into the tantalum crucible 3, first place the opening of the tantalum crucible 3 in the horizontal direction, put the tantalum carbide crucible 2 into the tantalum crucible 3 and push it to the bottom of the tantalum crucible 3, and then place the The tantalum crucible 3 is straightened to avoid hard collision between the tantalum carbide crucible 2 and the tantalum crucible 3 during the loading process; then the aluminum nitride raw material 8 is put into the tantalum carbide crucible 2, and the aluminum nitride seed crystal 7 The tantalum carbide sheet 1 is covered on the top opening of the tantalum carbide crucib...

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Abstract

The invention belongs to the technical field of semiconductor materials, and specifically relates to a device and method for improving the purity of aluminum nitride crystal growth raw materials, which is proposed for the defect that the carbon element enters into the crystal growth region during the use of the existing device and affects the growth of single crystal. The device comprises a tantalum crucible and a first tantalum disc covered on the tantalum crucible, a tantalum carbide crucible is arranged in the tantalum crucible, and the outer wall of the tantalum carbide crucible and the inner wall of the tantalum carbide crucible are gap fit, and the top end of the tantalum carbide crucible is covered with Tantalum carbide sheet, and form the aluminum nitride raw material chamber; a stepped shoulder is processed on the upper part of the inner wall of the tantalum crucible, and the stepped shoulder is located above the tantalum carbide sheet, and the stepped shoulder is from top to bottom. A second tantalum disc and an aluminum nitride ceramic disc are provided, and the first tantalum disc, the second tantalum disc and the tantalum crucible are jointly enclosed to form a tantalum powder particle chamber; the second tantalum disc, the aluminum nitride ceramic disc The sheet and the tantalum crucible are enclosed together to form an aluminum nitride powder chamber. The invention improves the quality of crystal growth by adsorbing carbon components.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a device and a method for improving the purity of aluminum nitride crystal growth raw materials. Background technique: [0002] Aluminum nitride belongs to the third-generation semiconductor material, which has the characteristics of high band gap, high thermal conductivity, high electron drift rate, and high chemical stability. Due to its good physical properties, it has broad application prospects in high temperature, high frequency, high power devices and deep ultraviolet optoelectronic devices. At present, tungsten crucibles or tantalum crucibles are generally used as crucibles for growing aluminum nitride single crystals. Tantalum crucibles are usually used in conjunction with graphite crucibles and graphite hard felts to perform single crystal growth experiments in induction heating crystal growth furnaces. Before using the tantalum crucible, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B35/00C30B29/40
CPCC30B35/007C30B29/403
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司