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Method for preparing indium tin oxide

A technology of indium tin oxide and oxidant, applied in tin compounds, chemical instruments and methods, inorganic chemistry, etc., can solve problems such as environmental hazards and atmospheric environmental pollution, and achieve the effects of saving input, good sintering activity and pressing performance

Inactive Publication Date: 2018-09-21
SHAOGUAN JINYUAN INDAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has a prominent shortcoming, that is, when metal indium and metal tin are dissolved in nitric acid, a large amount of nitrogen dioxide (NO2) will be released. 2 ) gas, which will cause serious pollution to the atmosphere
At present, although lye is also used to absorb NO 2 gas, but at the same time produce waste NaNO 3 and exhaust NO, still causing harm to the environment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Heat 50kg of metal indium until it melts, and then slowly introduce it into a water tank filled with high-purity water at a uniform speed to obtain indium flowers. Put the indium flower into a reaction kettle with a constant temperature system and a stirring system, and add 280kg of nitric acid solution with a mass concentration of 30%. Close the reaction kettle, set the temperature of the constant temperature system to 50°C, and turn on the stirring system at the same time. Then through the feeding port of the reaction kettle, 67kg of hydrogen peroxide with a mass concentration of 10% was added at a constant speed of 4L / hour by a metering pump, and a high-purity indium nitrate solution was obtained after 48 hours of reaction.

[0033] Heat 5kg of metal tin until it melts, and then slowly introduce it into a water tank filled with high-purity water at a constant speed to obtain tin flowers. The tin flower is put into a reaction kettle with a constant temperature system...

Embodiment 2

[0037] Heat 50kg of metal indium until it melts, and then slowly introduce it into a water tank filled with high-purity water at a uniform speed to obtain indium flowers. Put the indium flower into a reaction kettle with a constant temperature system and a stirring system, and add 420kg of nitric acid solution with a mass concentration of 20%. Close the reaction kettle, set the temperature of the constant temperature system to 70°C, and turn on the stirring system at the same time. Then, high-purity oxygen was introduced through the feeding port of the reactor, and the oxygen pressure was adjusted to 1.1 bar, and a high-purity indium nitrate solution was obtained after 48 hours of reaction.

[0038] Heat 10kg of metal tin until it melts, and then slowly introduce it into a water tank filled with high-purity water at a uniform speed to obtain tin flowers. The tin flower is put into a reaction kettle with a constant temperature system and a stirring system, and 210kg of a nitri...

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PUM

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Abstract

The invention relates to a method for preparing indium tin oxide. The method comprises the following steps of 1) heating and melting metal indium, adding the metal indium in water to obtain an indiumflower, adding the indium flower to a nitric acid solution, and adding an oxidizing agent for nitrification under stirring to obtain indium nitrate; 2) heating and melting metal tin, adding the metaltin to water to obtain a tin flower, and adding the tin flower to the nitric acid solution, and adding the oxidizing agent to perform nitrification under stirring to obtain tin nitrate; 3) mixing theindium nitrate and the tin nitrate, adding ammonia water to carry out a coprecipitation reaction, separating and drying the coprecipitated product, and calcining to obtain the indium tin oxide. The method does not generate nitrogen dioxide exhaust gas, and the obtained indium tin oxide has a uniform particle diameter.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a method for preparing indium tin oxide. Background technique [0002] Indium tin oxide (ITO) is a composite oxide formed by solid solution of tin oxide in indium oxide. ITO has good photoelectric performance, and the film containing ITO has high conductivity and high visible light transmittance, so it is widely used in various fields such as solar cells, liquid crystal display devices, and touch circuit boards. At present, the methods for preparing ITO thin films include magnetron sputtering, vacuum evaporation, sol-gel method, cluster deposition method, laser deposition method, etc. Among them, magnetron sputtering method is the most common method for preparing ITO thin films. When vacuum evaporation or magnetron sputtering is used to prepare ITO thin films, ITO powder must be prepared first, and then the ITO powder will be pressed and sintered into ITO target...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00C04B35/453C04B35/626
CPCC01G19/00C04B35/453C04B35/62605C04B2235/3293
Inventor 王泽乾王东伟
Owner SHAOGUAN JINYUAN INDAL
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