Method of performing a chemical mechanical planarization process

Abstract

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Description

technical field [0001] The present disclosure relates to a chemical mechanical planarization tool and a method for performing a chemical mechanical planarization process, and more particularly, to a chemical mechanical planarization tool for a wafer and a method for performing the chemical mechanical planarization process. Background technique [0002] Typically, semiconductor devices include active components, such as transistors, formed on a substrate. Any number of interconnect layers may be formed over the substrate, the interconnect layers connecting the active elements to each other and to external devices. Interconnect layers are typically made of low-k dielectric materials including metal trenches / vias. [0003] As the layers of the device are formed, planarization processes may be performed to planarize the layers to facilitate the formation of subsequent layers. For example, forming metal features in a substrate or in a metal layer may result in non-uniform topog...

AI Technical Summary

Problems solved by technology

For example, forming metal features in a substrate or in a metal layer may result in non-uniform topography

This inhomogeneous morphology may create difficulties in the formation of subsequent layers

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