Crystal growth device and growth method

Abstract

The application provides a crystal growth device and growth method, including a furnace body, a crucible, a cooling jacket and a flow guide tube, the cooling jacket is set inside the furnace body to cool the crystal, and the flow guide tube is set on the periphery of the cooling jacket , the guide tube includes an upper guide tube part and a lower guide tube part, the upper guide tube part is cylindrical and arranged around the cooling jacket, and the lower guide tube part is arranged at the lower end of the upper guide tube part and is located on the cooling jacket On the lower side of the crucible, the lower guide tube is a hollow upper, lower, and small circular platform structure. A groove is formed on the inner peripheral wall of the circular platform structure. The top of the groove runs through the circular platform structure, and the cooling jacket moves along the axial direction of the crucible. In this growth device, the cooling jacket moves along the axial direction of the crucible, which affects the distribution of the thermal field in the furnace body, and can fine-tune the temperature gradient at the solid-liquid interface, so that crystals in a defect-free growth area with a certain width can be drawn, which solves the problem of the existing technology. The temperature gradient at the solid-liquid interface is difficult to control, resulting in the pulling of crystals in the growth region with more defects.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a crystal growth device and a growth method. Background technique [0002] According to the theory proposed by Voronkov, if the intrinsic defects generated by growth are to be eliminated during the crystal growth process, the axial temperature gradient of the crystal between the solid-liquid interface needs to maintain a certain uniformity along the radial direction, and the crystal growth rate and The ratio V / G of the axial temperature gradient between the solid-liquid interface must be controlled within a certain range. Among them, v is the crystal growth rate, and G is the temperature gradient of the solid-liquid interface. When v / G is greater than a certain critical value, the defects in the crystal tend to be vacant (Vacancy Defect), otherwise, when v / G is less than a certain critical value, the crystal Internal defects tend to be inserted (InterstitialDef...

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Problems solved by technology

However, the position of the guide tube is fixed, and the liquid level position of the molten soup can only be adjusted. As a result, the liquid level at the interface will vibrate, which will affect the crystallization rate of the long crystal.

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