A T-shaped cross-beam cross island membrane pressure sensor chip and its preparation method

A pressure sensor, cross beam technology, used in the measurement of fluid pressure, fluid pressure measurement by changing ohmic resistance, instruments, etc., can solve the problem that the corrugated sheet is not resistant to corrosion, hysteresis, and the operating temperature of the oil-filled package cannot be higher than 200 ℃ and other problems, to achieve the effect of low cost, reasonable structure and easy processing

Active Publication Date: 2021-10-22
XI AN JIAOTONG UNIV
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Problems solved by technology

[0005] At present, most sensors use oil-filled packaging, but the working temperature of oil-filled packaging cannot be higher than 200 ° C, and the corrugated sheet is not corrosion-resistant, so there is a certain hysteresis

Method used

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  • A T-shaped cross-beam cross island membrane pressure sensor chip and its preparation method
  • A T-shaped cross-beam cross island membrane pressure sensor chip and its preparation method
  • A T-shaped cross-beam cross island membrane pressure sensor chip and its preparation method

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Embodiment Construction

[0045] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0046] Referring to Fig. 1(a), Fig. 1(b), Fig. 1(c), Fig. 1(d), figure 2 , a T-shaped cross-beam cross-island membrane pressure sensor chip, including a substrate 1, a film 2 is arranged in the middle of the front of the substrate 1, and a T-shaped cross beam 3 is connected to the upper surface of the film 2, and the T-shaped cross beam 3 is composed of four same-sized It is composed of T-beams, the narrow ends of the T-beams are connected at the tail, and the adjacent T-beams are vertical so that the T-shaped cross beams 3 are axisymmetrically distributed on the film 2, and the wide ends of the four T-beams are connected to the base 1 ; In the etching cavity on the back of the substrate 1, a cross-shaped mass 4 is attached to the center of the lower surface of the film 2, and the cross-shaped mass 4 corresponds to the T-shaped cross beam 3 up and dow...

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Abstract

A T-shaped cross-beam cross-island membrane pressure sensor chip and its preparation method. The sensor chip includes a thin film in the middle of the substrate. The upper surface of the film is connected with a T-shaped cross beam. The T-shaped cross beam is composed of four T-shaped beams of the same size. The narrow end of the beam is connected to the tail, and the wide end of the T-shaped beam is connected to the substrate; a cross-shaped mass is attached to the center of the lower surface of the film in the etching cavity on the back of the substrate, and the cross-shaped mass corresponds to the top and bottom of the T-shaped cross beam; T Pressure-sensitive embossed resistance strips are respectively arranged on the upper surface of the wide end of the word beam; four pressure-sensitive embossed resistance strips are sequentially connected through five P-type heavily doped silicon embossed blocks to form a semi-open-loop Wheatstone bridge; the preparation method is Make pressure-sensitive embossed resistance strips, P-type heavily doped silicon embossed blocks and point electrodes on SOI silicon wafers, then bond the silicon wafers to the front side of the glass, and finally etch the back cavity cross-shaped mass of the sensor; the sensor chip of the present invention has High temperature resistance of 300°C, corrosion resistance, high linearity and other characteristics, easy processing and low cost.

Description

technical field [0001] The invention relates to the technical field of MEMS piezoresistive micro-pressure sensors, in particular to a T-shaped cross-beam cross-island film pressure sensor chip and a preparation method. Background technique [0002] Microelectromechanicalsystems (MEMS for short) technology has the characteristics of small size, light weight, low power consumption, high reliability and excellent performance. Among them, micro pressure sensors are the most mature type of MEMS devices and are widely used. Used in petrochemical, aerospace, energy and power, transportation, metallurgy, machinery manufacturing, medical and health industries, the development of micro pressure sensors based on MEMS technology has become an eye-catching development direction. [0003] There are many types of miniature pressure sensors, mainly capacitive, resonant and piezoresistive. Capacitive pressure sensors are susceptible to signal interference, and special signal processing circ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/06G01L19/06
CPCG01L9/06G01L19/06G01L19/0618G01L19/0654G01L19/0681
Inventor 李村杨鑫婉赵玉龙郝乐张凯
Owner XI AN JIAOTONG UNIV
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