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Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal thin film

A composite substrate and waveguide structure technology, which is applied in the direction of optical waveguide light guide, light guide, optics, etc., can solve the problems of uncontrollable optical coupling, large deviation of silicon oxide layer thickness, poor surface flatness, etc., to improve the preparation efficiency, thickness The effect of good uniformity and small thickness deviation

Active Publication Date: 2022-05-24
JINAN JINGZHENG ELECTRONICS
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  • Abstract
  • Description
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Problems solved by technology

[0005] This application provides a preparation method of a composite substrate with a waveguide structure, a composite substrate and a photoelectric crystal film to solve the problem of chemical mechanical polishing of a silicon oxide layer with a large thickness in the prior art, which consumes a lot of time and reduces the piezoelectric film. At the same time, the thickness of the silicon oxide layer has the disadvantage of poor controllability. The surface of the silicon oxide layer after direct chemical mechanical polishing will still show undulations, resulting in large deviations in the thickness of the silicon oxide layer and poor thickness uniformity. And the surface flatness is poor, which leads to uncontrollable coupling of light in the lithium niobate thin film layer and silicon nitride optical waveguide, which leads to the poor consistency of the photoelectric modulation device including the photoelectric crystal thin film

Method used

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  • Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal thin film
  • Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal thin film
  • Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal thin film

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preparation example Construction

[0042] Specifically, see figure 2 , the preparation method comprises the following steps:

[0043] In step S11 , a waveguide layer precursor 120 is prepared on the substrate layer 110 .

[0044]In this step, the SI wafer is used as the substrate layer 110, and the PEVCD is used to prepare the waveguide layer precursor 120 on the SI wafer. Of course, the waveguide layer precursor 120 can also be prepared by thermal oxidation, sputtering, evaporation or electroplating, etc., to prepare the waveguide The method of layering the precursor 120 can be selected as required, and this step is not specifically limited; the number of layers of the substrate layer 110 can be set as required, which can be a single-layer substrate layer or a multi-layer substrate layer, and the material of the substrate layer 110 can be silicon, SOI , lithium niobate, lithium tantalate, quartz, sapphire, silicon carbide, etc., the material of the substrate layer 110 can be selected as required, and this st...

Embodiment 1

[0080] Embodiment 1 (direct bonding + grinding and polishing method)

[0081] 1) Prepare a silicon wafer with a size of 4 inches, a thickness of 0.5mm and a smooth surface, and use PECVD (or thermal oxidation, sputtering, evaporation, electroplating, etc.) to prepare the silicon nitride waveguide layer on the silicon wafer before preparing body.

[0082] 2) Prepare a photoresist removal layer precursor on the silicon nitride waveguide precursor, and use photolithography to prepare the photoresist removal layer precursor to have the same photoresist removal pattern as the top pattern of the silicon nitride waveguide layer. Floor.

[0083] 3) The silicon nitride waveguide layer precursor is etched by dry etching or wet etching, and the part of the silicon nitride waveguide layer precursor without the photoresist removal layer is etched away to form nitrogen A silicon nitride waveguide layer; wherein a groove structure is formed in the etched silicon nitride waveguide layer, an...

Embodiment 2

[0090] Example 2 (Method of Ion Implantation + Bonding Separation)

[0091] 1) A silicon wafer with a size of 4 inches, a thickness of 0.5 mm and a smooth surface is prepared, and a photoresist removal layer precursor is prepared on the silicon wafer.

[0092] 2) Using a photolithography method, the photoresist removal layer precursor is prepared into a photoresist removal layer with the same pattern on the top of the silicon waveguide layer.

[0093] 3) The silicon wafer (silicon waveguide layer precursor) is etched by dry etching or wet etching, and the part without the photoresist removal layer on the silicon wafer is etched away to form a silicon waveguide A groove structure is formed in the etched silicon waveguide layer, and the height of the groove structure is equal to the thickness of the silicon waveguide layer.

[0094] 4) Deposit silicon dioxide on the side with the photoresist removal layer as the coating isolation layer, and the silicon dioxide fills the groove ...

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Abstract

The application provides a method for preparing a composite substrate with a waveguide structure, a composite substrate, and a photoelectric crystal film, wherein the method for preparing a composite substrate with a waveguide structure includes preparing a waveguide layer precursor on the substrate layer; Prepare a removal layer precursor on the precursor; perform etching on the removal layer precursor to form a removal layer; perform etching on the waveguide layer precursor to form a waveguide layer, and the top of the waveguide layer The pattern is the same as that of the removed layer, wherein a groove structure is formed in the waveguide layer after etching, and the height of the groove structure is equal to the thickness of the waveguide layer; Deposit the coating isolation layer material on the side where the layer is located; remove the removed layer; continue to deposit the coating isolation layer material, and planarize it to the target thickness to obtain the coating isolation layer and obtain the waveguide structure composite substrate . By adopting the above scheme, the preparation time of the composite substrate is shortened, and the preparation efficiency of the composite substrate is improved.

Description

technical field [0001] The application relates to the technical field of semiconductors, and in particular, to a preparation method of a composite substrate of a waveguide structure, a composite substrate and a photoelectric crystal film. Background technique [0002] Lithium niobate crystal has large electro-optic coefficient, nonlinear optical coefficient and excellent photorefractive, piezoelectric and acoustic properties. The photoelectric modulation device prepared by the integrated structure of lithium niobate and silicon nitride optical waveguide has low Therefore, it has broad application prospects in the manufacture of wide-bandwidth chips. [0003] The silicon nitride optical waveguide and the lithium niobate film are usually connected by a silicon oxide layer in the photoelectric crystal film. The thickness of the silicon oxide layer is related to the design of the optoelectronic modulator, and the thickness is generally only tens of nanometers. The silicon oxid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/136G02B6/132G02B6/13
CPCG02B6/136G02B6/132G02B6/13
Inventor 王金翠张秀全连坤刘桂银张涛李真宇
Owner JINAN JINGZHENG ELECTRONICS