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Processing method for wafer

A processing method and wafer technology, applied in the direction of film/flaky adhesives, semiconductor devices, electrical components, etc., can solve the problems of reduced adhesion between the chuck table and the protective tape, pollution sources, and insufficient cleaning, etc. Achieves the effect of suppressing adhesion to the thermocompression bonding sheet

Pending Publication Date: 2021-02-23
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, when a protective tape is pasted on the front surface of the wafer via a paste or the like, undulations are formed on the front side of the wafer, and the undulations reduce the adhesion between the chuck table and the protective tape, which may cause grinding debris to enter. The main cause of the gap between the chuck table and the protective belt
In addition, in the wafer which has completed the grinding process in this way, although the grinding surface is cleaned by the cleaning unit provided in the grinding device, because the cleaning of the protective tape side of the wafer held by the chuck table is insufficient, Therefore, there is a problem of becoming a source of pollution when transferring to the next process

Method used

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  • Processing method for wafer
  • Processing method for wafer
  • Processing method for wafer

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Embodiment Construction

[0024] Hereinafter, an embodiment of a wafer processing method according to an embodiment of the present invention will be described in detail with reference to the drawings.

[0025] The wafer processing method of the present embodiment includes the following steps: a thermocompression bonding sheet arrangement step, disposing a thermocompression bonding sheet of the size covering the wafer on the front surface of the wafer; an integration step, flattening the thermocompression bonding sheet, In addition, the thermocompression bonding sheet and the wafer are integrated; in the grinding process, the thermocompression bonding sheet side is kept on the chuck table of the grinding device, and grinding is performed to a desired thickness while supplying grinding water to the back of the wafer; And a thermocompression bonding wafer cleaning step, carrying out the wafer integrated with the thermocompression bonding wafer from the chuck table, and cleaning the thermocompression bondin...

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Abstract

Provided is a processing method for a wafter, capable of sufficiently removing abrasive dust adhering to a wafer held by a chuck table during abrasive processing. The processing method for a wafer includes a thermocompression-bonding sheet arrangement step of arranging, on a front side of the wafer, a thermocompression-bonding sheet of a size sufficient to cover the wafer, an integration step of pressing the thermocompression-bonding sheet under heat by a planarizing member, so that the thermocompression-bonding sheet is planarized and the thermocompression-bonding sheet and the wafer are integrated together, a grinding step of holding the wafer on a side of the thermocompression-bonding sheet on a chuck table of a grinding apparatus and grinding the wafer to a desired thickness while supplying grinding water to a back side of the wafer, and a thermocompression-bonding sheet rinsing step of unloading the integrated wafer from the chuck table and rinsing the thermocompression-bonding sheet.

Description

technical field [0001] The present invention relates to a wafer processing method, which grinds the back surface of a wafer divided by a plurality of intersecting dividing lines and formed with a plurality of devices on the front surface. Background technique [0002] After the wafer with multiple devices such as ICs and LSIs formed on the front side is divided by a plurality of intersecting dividing lines, the adhesive tape is pasted on the front side and protected, and the protective tape side is held by the chuck of the grinding device. On the stage, the back surface is ground to a desired thickness (for example, refer to Patent Document 1). [0003] A wafer formed to a desired thickness as described above is divided into individual device chips by a dicing device or a laser processing device, and the divided device chips are used in electronic devices such as mobile phones and personal computers. [0004] The grinding apparatus is roughly composed of the following parts...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/304
CPCH01L21/6835H01L21/304H01L2221/68327H01L2221/68386H01L21/78H01L2221/6834H01L21/67092H01L21/6838H01L21/67051H01L21/67046H01L21/67253H01L21/67132H01L21/67219H01L21/30625H01L21/02057C09J7/241C09J7/255H01L21/6836H01L2221/68318B29C65/02B29C65/44
Inventor 松泽稔藤井祐介
Owner DISCO CORP
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