Display substrate and preparation method

A technology for display substrates and substrate substrates, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of complex process and high development cost, and achieve the effect of simple process, low cost and stable output characteristics.

Pending Publication Date: 2021-02-26
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a display substrate and a preparation method to solve the problem of the existing display substrate and preparation method. Since the top-gate self-aligned

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Display substrate and preparation method
  • Display substrate and preparation method
  • Display substrate and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0032]The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present invention.

[0033]In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or The positional relationship is based on the position or positional relationship shown in the drawings, and is only for the convenience of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A display substrate at least comprises a substrate body, a first thin film transistor, a storage capacitor, a second thin film transistor and a light-emitting unit; the first thin film transistor is athin film transistor without a shading layer; the second thin film transistor is a thin film transistor with a top shading layer; the second thin film transistor further comprises a buffer layer, a second active layer, a second gate insulating layer, a second gate electrode, a second interlayer insulating layer, a second drain electrode, a second source electrode, a shading layer and a passivation layer; the second drain electrode, the second source electrode and the shading layer are all formed by patterning a first metal thin film; the shading layer completely covers the area where the second grid electrode is located; and the first end of the shading layer extends to the area where the second drain electrode is located.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate and a preparation method. Background technique [0002] Currently, organic light-emitting diodes (Organic Light-Emitting Diode, OLED) or micro light-emitting diodes (Micro Light-Emitting Diode, Micro-LED) are used as current-driven devices, which require a large current passing capability and good device stability. , In-plane threshold voltage (Threshold Voltage, V th ) Uniformity and low leakage current characteristics. The study found that the Top Gate IGZO Thin Film Transistor has high mobility, small parasitic capacitance and low leakage current, and is more suitable as a current-driven display circuit. For bottom-emitting display substrates, it is best to have a light blocking layer at the bottom of the driving thin film transistor (TFT), which can block the influence of ambient light on the characteristics of the TFT, and the output characteristics of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/12H01L27/15H01L27/32H01L29/786H01L21/77
CPCH01L29/78633H01L27/1225H01L27/1255H01L27/1288H01L27/127H01L27/156H10K59/1213
Inventor 卢马才
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products