Semiconductor Device Including Trench Electrode Structures

Abstract

A semiconductor device including a trench electrode structure is disclosed. The semiconductor device (100) is proposed. A semiconductor device (100) includes a semiconductor body (102), the semiconductor body (102) including a first major surface (104). The plurality of trench electrode structures (1061, 1062, 106) extend in parallel along a first lateral direction (x1). A first trench electrode structure (1061) of the plurality of trench electrode structures (1061, 1062, 106) includes a gate electrode (108). The gate contact (110) is electrically connected to the gate electrode (108) in the gate contact region (112). The gate contact region (112) is arranged in the first section along a first lateral direction (x1). An isolation structure (118) is arranged between the gate contact (110) and the semiconductor body (102) in the gate contact region (112). A bottom side (120) of the isolation structure (118) is arranged along the vertical direction (y) between a bottom side (122) of a first trench electrode structure (1061) of the plurality of trench electrode structures (1061, 1062, 106) and the first main surface (104). The gate contact (110) extends in a vertical direction (y) to the first main surface (104) or below the first main surface (104).

Description

technical field [0001] The present disclosure relates to semiconductor devices, and more particularly to semiconductor devices including trench electrode structures. Background technique [0002] Semiconductor devices such as insulated gate bipolar transistors (IGBTs) or insulated gate field effect transistors (IGFETs) such as metal oxide semiconductor field effect transistors (MOSFETs) may include trench electrode structures such as trench gate electrode structures and trench Slot source electrode structure. The electrodes in the trench electrode structure may be electrically connected in an electrode contact area, such as a gate electrode contact area or a source electrode contact area. Scaling semiconductor devices to smaller dimensions may come with more challenging contacts to electrodes. For example, when scaling semiconductor devices to smaller dimensions, manufacturing complexity and cost may increase. [0003] There is a need for improved access to electrodes in ...

AI Technical Summary

Problems solved by technology

For example, when scaling semiconductor devices to smaller dimensions, manufacturing complexity and cost can increase

Images