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Radio frequency filter and manufacturing method thereof

A technology of radio frequency filter and manufacturing method, which is applied in the direction of electrical components, impedance networks, etc., can solve the problems of frequency temperature coefficient increase and BAW radio frequency filter not working normally, and achieve the effect of low frequency temperature coefficient and stable performance

Pending Publication Date: 2021-03-02
MG MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the frequency temperature coefficient of the BAW RF filter will increase at ultra-low temperatures, and the frequency of the BAW RF filter will change with temperature, which will eventually cause the BAW RF filter to not work properly

Method used

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  • Radio frequency filter and manufacturing method thereof
  • Radio frequency filter and manufacturing method thereof

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Embodiment 1

[0027] This embodiment provides a radio frequency filter, figure 1 It is a schematic cross-sectional structure diagram of a radio frequency filter provided by the present invention, refer to figure 1 The radio frequency filter provided in this embodiment includes: a substrate 110, an upper electrode layer 120, a lower electrode layer 130, a heating layer 140, and a gallium nitride layer 150; the substrate 110 includes a via region; the lower electrode layer 130 is arranged on the substrate One side of the bottom 110; the heating layer 140 is arranged on the side of the substrate 110 away from the lower electrode layer 130, and the lower electrode layer 130 and the heating layer 140 are in contact with the through hole area; the gallium nitride layer 150 is arranged on the heating layer 140 away from the substrate One side of the bottom 110 ; the upper electrode layer 120 is disposed on the side of the gallium nitride layer 150 away from the substrate 110 .

[0028] Specifical...

Embodiment 2

[0042] figure 2 It is a flow chart of a method for manufacturing a radio frequency filter provided by the present invention. This embodiment also provides a method for manufacturing a radio frequency filter. Refer to figure 2 , the method includes:

[0043] Step 210, providing a substrate, and growing a heating layer on one side of the substrate;

[0044] Step 220, growing a gallium nitride layer on the side of the heating layer away from the substrate;

[0045] Step 230, etching the side of the substrate away from the heating layer to form a via area;

[0046] Step 240, setting the lower electrode layer on the side of the substrate away from the heating layer, and the lower electrode layer and the heating layer are in contact with each other in the through hole area;

[0047] Step 250 , growing an upper electrode layer on the side of the gallium nitride layer away from the substrate.

[0048] The method for making a radio frequency filter provided in this embodiment, th...

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Abstract

The invention provides a radio frequency filter and a manufacturing method thereof. The radio frequency filter comprises a substrate, an upper electrode layer, a lower electrode layer, a heating layerand a gallium nitride layer, wherein the substrate comprises a through hole region, the lower electrode layer is arranged on one side of the substrate, the heating layer is arranged on one side, faraway from the lower electrode layer, of the substrate, and the lower electrode layer is in contact with the heating layer in the through hole region, the gallium nitride layer is arranged on one side,far away from the substrate, of the heating layer, and the upper electrode layer is arranged at one side, far away from the substrate, of the gallium nitride layer. The working performance of the radio frequency filter provided by the invention is not influenced by the environment temperature, and the radio frequency filter can work normally at an ultralow temperature.

Description

technical field [0001] The invention relates to the technical field of communication devices, in particular to a radio frequency filter and a manufacturing method thereof. Background technique [0002] Bulk Acoustic Wave (BAW, Bulk Acoustic Wave) RF filters play an important role in the communication field. Compared with traditional filters, BAW RF filters have low loss and high isolation characteristics. [0003] However, the frequency temperature coefficient of the BAW RF filter will increase at ultra-low temperatures, and the frequency of the BAW RF filter will change with temperature, which will eventually cause the BAW RF filter to not work properly. Contents of the invention [0004] The invention provides a radio frequency filter and a manufacturing method thereof. The working performance of the radio frequency filter provided by the invention is not affected by ambient temperature and can work normally at ultra-low temperature. [0005] In a first aspect, the pres...

Claims

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Application Information

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IPC IPC(8): H03H9/64H03H9/02
CPCH03H9/02H03H9/64
Inventor 缪建民张金姣
Owner MG MICROELECTRONICS CO LTD
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